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IRF7509TRPBF

P1-P3P4-P6P7-P8
IRF7509PbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
100
200
300
400
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
024681012
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
V = 24V
V = 15V
I = 1.7A
DS
DS
D
Fig 7. Typical On-Resistance Vs. Gate
Voltage
0 4 8 12 16
0.060
0.080
0.100
0.120
0.140
R , Drain-to-Source On Resistance
V , Gate-to-Source Voltage (V)
GS
DS (on)
ID = 2.7A
N - Channel
0.1
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF7509PbF
www.irf.com 5
Fig 11. Typical Output Characteristics
Fig 13. Typical Transfer Characteristics
Fig 12. Typical Output Characteristics
0.1
1
10
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
0.1
1
10
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
0.1
1
10
3.0 4.0 5.0 6.0 7.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
Fig 14. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
Fig 15. Normalized On-Resistance
Vs. Temperature
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -1.2A
D
Fig 16. Typical On-Resistance Vs. Drain
Current
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
P - Channel
IRF7509PbF
6 www.irf.com
Fig 18. Maximum Safe Operating Area
Fig 17. Typical On-Resistance Vs. Gate
Voltage
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
P - Channel
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
0
4
8
12
16
20
024681012
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
V = -24V
V = -15V
DS
DS
I = -1.2A
D
FOR TEST CIRCUIT
SEE FIGURE 9
0
100
200
300
400
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
N-P - Channel
0.1
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
P1-P3P4-P6P7-P8

IRF7509TRPBF

Mfr. #:
Buy IRF7509TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT DUAL N/PCh 30V 2.4A Micro 8
Lifecycle:
New from this manufacturer.
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