OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PMEG3010AESAYL

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG3010AESA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Preliminary data sheet 3 August 2015 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse breakdown
voltage
I
R
= 10 mA; t
p
= 300 µs; δ = 0.02;
T
j
= 25 °C
30 - - V
I
F
= 1 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 140 - mV
I
F
= 10 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 200 - mV
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 270 325 mV
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 300 - mV
I
F
= 500 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 355 405 mV
I
F
= 700 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 380 - mV
V
F
forward voltage
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 415 480 mV
V
R
= 5 V; t
p
≤ 3 ms; δ ≤ 0.3; T
j
= 25 °C - 13 - µA
V
R
= 10 V; t
p
≤ 3 ms; δ ≤ 0.3; T
j
= 25 °C - 22 90 µA
V
R
= 20 V; t
p
≤ 3 ms; δ ≤ 0.3; T
j
= 25 °C - 60 255 µA
I
R
reverse current
V
R
= 30 V; t
p
≤ 3 ms; δ ≤ 0.3; T
j
= 25 °C - 300 1250 µA
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 86 - pFC
d
diode capacitance
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C - 32 - pF
t
rr
reverse recovery time I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
- 3.5 - ns
NXP Semiconductors
PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG3010AESA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Preliminary data sheet 3 August 2015 7 / 15
aaa-016291
10
-2
10
-3
1
10
-1
10
I
F
(A)
10
-4
V
F
(V)
0.0 0.80.60.2 0.4
(1)
(2)
(3) (4) (5)
pulsed condition
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 85 °C
(4) T
j
= 25 °C
(5) T
j
= −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
pulsed condition
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 85 °C
(4) T
j
= 25 °C
(5) T
j
= −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
f = 1 MHz; T
amb
= 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
NXP Semiconductors
PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG3010AESA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Preliminary data sheet 3 August 2015 8 / 15
T
j
= 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
FR4 PCB, mounting pad for anode and cathode 1
cm
2
each
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
T
j
= 150 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PMEG3010AESAYL

Mfr. #:
Buy PMEG3010AESAYL
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers BL Bipolar Discretes
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet