NTD4906NT4G

© Semiconductor Components Industries, LLC, 2013
October, 2013 Rev. 5
1 Publication Order Number:
NTD4906N/D
NTD4906N
Power MOSFET
30 V, 54 A, Single NChannel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DraintoSource Voltage V
DSS
30 V
GatetoSource Voltage V
GS
"20 V
Continuous Drain
Current (R
q
JA
)
(Note 1)
Steady
State
T
A
= 25°C
I
D
14
A
T
A
= 100°C 9.9
Power Dissipation
(R
q
JA
) (Note 1)
T
A
= 25°C P
D
2.6 W
Continuous Drain
Current (R
q
JA
) (Note
2)
T
A
= 25°C
I
D
10.3
A
T
A
= 100°C 7.3
Power Dissipation
(R
q
JA
) (Note 2)
T
A
= 25°C P
D
1.38 W
Continuous Drain
Current (R
q
JC
)
(Note 1)
T
C
= 25°C
I
D
54
A
T
C
= 100°C 38
Power Dissipation
(R
q
JC
) (Note 1)
T
C
= 25°C P
D
37.5 W
Pulsed Drain Current
t
p
=10ms
T
A
= 25°C I
DM
223 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
90 A
Operating Junction and Storage Temperature T
J
, T
stg
55 to
175
°C
Source Current (Body Diode) I
S
32 A
Drain to Source dV/dt dV/dt 6.5 V/ns
Single Pulse DraintoSource Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
L = 0.1 mH, I
L(pk)
= 31 A, R
G
= 25 W)
E
AS
48 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
CASE 369D
IPAK
(Straight Lead
DPAK)
30 V
5.5 mW @ 10 V
R
DS(on)
MAX
54 A
I
D
MAXV
(BR)DSS
8.0 mW @ 4.5 V
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
2
3
4
CASE 369AD
IPAK
(Straight Lead)
1
2
3
4
NChannel
D
S
G
AYWW
49
06NG
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
AYWW
49
06NG
AYWW
49
06NG
A = Assembly Location
Y = Year
WW = Work Week
4906N = Device Code
G = PbFree Package
1
2
3
4
NTD4906N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctiontoCase (Drain)
R
q
JC
4.0
°C/W
JunctiontoTab (Drain)
R
q
JCTAB
4.3
JunctiontoAmbient Steady State (Note 1)
R
q
JA
58
JunctiontoAmbient Steady State (Note 2)
R
q
JA
109
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
15 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
GatetoSource Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.6 2.2 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.0 mV/°C
DraintoSource On Resistance R
DS(on)
V
GS
= 10 V
I
D
= 30 A 4.6 5.5
mW
I
D
= 15 A 4.6
V
GS
= 4.5 V
I
D
= 30 A 6.5 8.0
I
D
= 15 A 6.5
Forward Transconductance gFS V
DS
= 1.5 V, I
D
= 30 A 52 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
1932
pF
Output Capacitance C
oss
642
Reverse Transfer Capacitance C
rss
19
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
11
nC
Threshold Gate Charge Q
G(TH)
3.0
GatetoSource Charge Q
GS
5.9
GatetoDrain Charge Q
GD
1.8
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
24 nC
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
13
ns
Rise Time t
r
21
TurnOff Delay Time t
d(off)
20
Fall Time t
f
3.7
TurnOn Delay Time t
d(on)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
7.7
ns
Rise Time t
r
19
TurnOff Delay Time t
d(off)
22
Fall Time t
f
2.3
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4906N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.87 1.1
V
T
J
= 125°C 0.76
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt= 100 A/ms,
I
S
= 30 A
33
ns
Charge Time ta 17
Discharge Time tb 16
Reverse Recovery Time Q
RR
25 nC
PACKAGE PARASITIC VALUES
Source Inductance (Note 5)
L
S
T
A
= 25°C
2.85
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK (Note 5) L
D
1.88
Gate Inductance (Note 5) L
G
4.9
Gate Resistance R
G
1.0 2.0
W
5. Assume terminal length of 110 mils.

NTD4906NT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 30V 54A 5.5 mOhm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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