NTD4906NT4G

NTD4906N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
10 V
15
0.010
45
0.006
0.004
125
1.8
1.2
1.0
0.6
10,000
0521
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
3
0.010
4
0.007
0.004
5
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. DraintoSource Leakage Current
vs. Drain Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
50 5025025 75 125100
3 3.5
1510 305
3
V
DS
10 V
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
T
J
= 150°C
T
J
= 125°C
40
0
80
4 4.5
T
J
= 25°C
20
10
7 V
2.4 V
2.0
5
1000
4
2.52
610
0.008
85
0.008
105
4.2 V
4.5 V
3.4 V
3.6 V
3.8 V
125
50
25
75
100
20
60
100
I
D
= 30 A
T
J
= 25°C
789
0.005
0.006
0.009
55 65 95 115
V
GS
= 10 V
150
100
3.2 V
2.8 V
2.6 V
3.0 V
753525
0.009
0.005
0.007
1.4
0.8
1.6
25
T
J
= 85°C
NTD4906N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
300101525
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
500
0
1500
5
V
GS
= 0 V
T
J
= 25°C
C
oss
C
iss
2000
2500
V
GS
Figure 8. GateToSource and DrainToSource
Voltage vs. Total Charge
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
15
6
105
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
T
J
= 25°C
Q
GD
Q
GS
Q
T
3015
0
0.4
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6 1.0
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
0.8
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
0.1
1000
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
9
1
100
0
25
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 31 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75 175
10
20
30
100 125
40
50
EAS, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
150
1000
12
20 25
T
J
= 125°C
0.2
5
15
25
35
45
0
NTD4906N
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES
0.10.00001
PULSE TIME (s)
100
10
0.1
0.01
0.001
0.0001 0.001 0.01 1.0 10 1000.000001
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
1000
R(t) (C/W)
Figure 13. FET Thermal Response
1.0
PSi TAB-A
Figure 14. GFS vs ID
050
ID (A)
40
10
0
80
GFS (S)
30
70
20
60
10
50
20 30 40 60 70
ORDERING INFORMATION
Order Number Package Shipping
NTD4906NT4G DPAK
(PbFree, HalideFree)
2500 / Tape & Reel
NTD4906N1G IPAK
(PbFree, HalideFree)
75 Units / Rail
NTD4906N35G IPAK Trimmed Lead
(PbFree, HalideFree)
75 Units / Rail
NTD4906NT4H DPAK
(PbFree, HalideFree)
2500 / Tape & Reel
NTD4906N1H IPAK
(PbFree, HalideFree)
75 Units / Rail
NTD4906N35H IPAK Trimmed Lead
(PbFree, HalideFree)
75 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

NTD4906NT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 30V 54A 5.5 mOhm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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