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SQD10N30-330H_GE3

P1-P3P4-P6P7-P9P10-P10
SQD10N30-330H
www.vishay.com
Vishay Siliconix
S15-1136-Rev. C, 12-May-15
1
Document Number: 67070
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 300 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified
d
• 100 % R
g
tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. 1.5 kΩ resistance in series with the gate.
PRODUCT SUMMARY
V
DS
(V) 300
R
DS(on)
(Ω) at V
GS
= 10 V 0.330
I
D
(A) 10
Configuration Single
D
G
S
N-Channel MOSFET
TO-252
Top View
TO
G
D
S
Drain connected to tab
ORDERING INFORMATION
Package TO-252
Lead (Pb)-free and Halogen-free SQD10N30-330H-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
300
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current
T
C
= 25 °C
I
D
10
A
T
C
= 125 °C 5
Continuous Source Current (Diode Conduction)
a
I
S
50
Pulsed Drain Current
b
I
DM
16
Single Pulse Avalanche Current
e
L = 0.05 mH
I
AS
12.65
Single Pulse Avalanche Energy
e
E
AS
4mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
107
W
T
C
= 125 °C 35
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
50
°C/W
Junction-to-Case (Drain) R
thJC
1.4
SQD10N30-330H
www.vishay.com
Vishay Siliconix
S15-1136-Rev. C, 12-May-15
2
Document Number: 67070
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 300 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3.4 3.8 4.4
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 300 V - - 1
μA V
GS
= 0 V V
DS
= 300 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 300 V, T
J
= 175 °C - - 250
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
≥ 5 V 10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 14 A - 0.275 0.330
ΩV
GS
= 10 V I
D
= 14 A, T
J
= 125 °C - - 0.733
V
GS
= 10 V I
D
= 14 A, T
J
= 175 °C - - 1.000
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 14 A - 26 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 1749 2190
pF Output Capacitance C
oss
- 112 140
Reverse Transfer Capacitance C
rss
-4455
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 150 V, I
D
= 7 A
-3147
nC Gate-Source Charge
c
Q
gs
-8-
Gate-Drain Charge
c
Q
gd
-9.6-
Gate Resistance R
g
f = 1 MHz 0.4 0.8 3 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= 150 V, R
L
= 21 Ω
I
D
≅ 7 A, V
GEN
= 10 V, R
g
= 1 Ω
-1015
ns
Rise Time
c
t
r
-1828
Turn-Off Delay Time
c
t
d(off)
-2030
Fall Time
c
t
f
-812
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--16A
Forward Voltage V
SD
I
F
= 25 A, V
GS
= 0 V - 0.9 1.5 V
SQD10N30-330H
www.vishay.com
Vishay Siliconix
S15-1136-Rev. C, 12-May-15
3
Document Number: 67070
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
4
8
12
16
20
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 7 V
V
GS
= 5 V
V
GS
= 6 V
0.0
0.2
0.4
0.6
0.8
1.0
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= - 55 °C
T
C
= 125 °C
0.00
0.20
0.40
0.60
0.80
1.00
0 4 8 12 16 20
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 10 V
0
3
6
9
12
15
18
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
8
16
24
32
40
0 3 6 9 12 15
g
fs
-Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
400
800
1200
1600
2000
2400
0 20406080100
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P9P10-P10

SQD10N30-330H_GE3

Mfr. #:
Buy SQD10N30-330H_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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