SQD10N30-330H_GE3

SQD10N30-330H
www.vishay.com
Vishay Siliconix
S15-1136-Rev. C, 12-May-15
4
Document Number: 67070
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 10 20 30 40
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 7 A
V
DS
= 150 V
-2.0
-1.4
-0.8
-0.2
0.4
1.0
-50 - 25 0 25 50 75 100 125 150 175
V
GS(th)
Variance (V)
T
J
-Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.0
0.7
1.4
2.1
2.8
3.5
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
-On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
I
D
= 17 A
V
GS
= 10 V
0.0
0.3
0.6
0.9
1.2
048121620
R
DS(on)
-On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
300
320
340
360
380
400
-50 - 25 0 25 50 75 100 125 150 175
V
DS
-Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 10 mA
SQD10N30-330H
www.vishay.com
Vishay Siliconix
S15-1136-Rev. C, 12-May-15
5
Document Number: 67070
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.01 0.1 1 10 100 1000
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
100 ms, 1s, 10 s, DC
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
10
Normalized Effective Transient
Thermal Impedance
1000
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1001
SQD10N30-330H
www.vishay.com
Vishay Siliconix
S15-1136-Rev. C, 12-May-15
6
Document Number: 67070
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67070
.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
10
Normalized Effective Transient
Thermal Impedance
100
0.2
0.1
Duty Cycle = 0.5
1
0.02
0.05
Single Pulse

SQD10N30-330H_GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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