ESD8011MUT5G

© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 4
1 Publication Order Number:
ESD8011/D
ESD8011
ESD Protection Diodes
Ultra Low Capacitance ESD Protection
Diode for High Speed Data Line
The ESD8011 ESD protection diodes are designed to protect high
speed data lines from ESD. Ultra−low capacitance and low ESD
clamping voltage make this device an ideal solution for protecting
voltage sensitive high speed data lines.
Features
Ultra Low Capacitance (0.10 pF Typ, I/O to GND)
Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
Low ESD Clamping Voltage
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
USB 3.x
MHL 2.0
SATA/SAS
PCI Express
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Operating Junction Temperature Range T
J
55 to +125 °C
Storage Temperature Range T
stg
55 to +150 °C
Lead Solder Temperature −
Maximum (10 Seconds)
T
L
260 °C
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ESD
ESD
±20
±20
kV
kV
Maximum Peak Pulse Current
8/20 ms @ T
A
= 25°C
I
pp
3.6 A
Maximum Peak Pulse Power
8/20 ms @ T
A
= 25°C
P
pk
34 W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
MARKING
DIAGRAM
X3DFN2
CASE 152AF
PIN CONFIGURATION
AND SCHEMATIC
www.
onsemi.com
R = Specific Device Code
(Rotated 90° clockwise)
M = Date Code
=
12
PIN 1
M
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
R
ESD8011
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol Parameter
V
RWM
Working Peak Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
HOLD
Holding Reverse Voltage
I
HOLD
Holding Reverse Current
R
DYN
Dynamic Resistance
I
PP
Maximum Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
C
= V
HOLD
+ (I
PP
* R
DYN
)
I
V
V
C
V
RWM
V
HOLD
V
BR
R
DYN
V
C
I
R
I
T
I
HOLD
−I
PP
R
DYN
I
PP
V
C
= V
HOLD
+ (I
PP
* R
DYN
)
V
RWM
V
HOLD
I
R
I
T
I
HOLD
V
BR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
I/O Pin to GND 5.5 V
Breakdown Voltage V
BR
I
T
= 1 mA, I/O Pin to GND 6.5 7.3 V
Reverse Leakage Current I
R
V
RWM
= 5.5 V, I/O Pin to GND 1.0
mA
Reverse Holding Voltage V
HOLD
I/O Pin to GND 2.05 V
Holding Reverse Current I
HOLD
I/O Pin to GND 17 mA
Clamping Voltage
TLP (Note 2)
V
C
I
PP
= 8 A IEC61000−4−2 Level 2 Equivalent
(±4 kV Contact, ±8 kV Air)
11.0
V
I
PP
= 16 A
IEC61000−4−2 Level 2 Equivalent
(±8 kV Contact, ±16 kV Air)
19.0
Dynamic Resistance R
DYN
Pin1 to Pin2
Pin2 to Pin1
1.0
1.0
W
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz 0.10 0.20 pF
Series Inductance L
S
V
R
= 0 V 0.3 nH
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. For test procedure see Figure 5 and application note AND8307/D.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
0
= 50 W, t
p
= 100 ns, t
r
= 4 ns, averaging window; t
1
= 30 ns to t
2
= 60 ns.
ESD8011
www.onsemi.com
3
TYPICAL CHARACTERISTICS
FREQUENCY (Hz)
1E101E91E81E7
−14
−12
−10
−8
−4
−2
0
2
(dB)
−6
3E10
m1
m2
Interface
Data Rate
(Gb/s)
Fundamental Frequency
(GHz)
3
rd
Harmonic Frequency
(GHz)
ESD8011 Insertion Loss (dB)
USB 3.0 5 2.5 (m1) 7.5 (m2) m1 = 0.087
m2 = 0.256
Figure 1. ESD8011 Insertion Loss

ESD8011MUT5G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors ULTRA LOW CAP SCR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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