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MMBT5551M3T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 3
1 Publication Order Number:
MMBT5551M3/D
MMBT5551M3
NPN High Voltage
Transistor
The MMBT5551M3 device is a spin−off of our popular SOT−23
three−leaded device. It is designed for general purpose high voltage
applications and is housed in the SOT−723 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
Features
• Reduces Board Space
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
160 Vdc
Collector−Base Voltage V
CBO
180 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
60 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
265
2.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
q
JA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
640
5.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
q
JA
195 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MMBT5551M3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
COLLECTOR
3
1
BASE
2
EMITTER
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−723
CASE 631AA
STYLE 1
1
2
3
AH M
AH = Specific Device Code
M = Date Code
MARKING
DIAGRAM
NSVMMBT5551M3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
MMBT5551M3
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
160 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
180 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.0 −
Vdc
Collector Cutoff Current
(V
CB
= 120 Vdc, I
E
= 0)
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100°C)
I
CBO
−
−
100
100
nAdc
mAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
− 50
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
h
FE
80
80
30
−
250
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
−
−
0.15
0.20
Vdc
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
−
−
1.0
1.0
Vdc
Collector Emitter Cut−off
(V
CB
= 10 V)
(V
CB
= 75 V)
I
CES
−
−
50
100
nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MMBT5551M3
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
T
J
= 125°C
-55°C
25°C
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0
2.0
3.0
5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
V
CE
= 1.0 V
V
CE
= 5.0 V
Figure 2. Collector Saturation Region
I
B
, BASE CURRENT (mA)
1.0
I
C
= 1.0 mA
0
0.3
0.005 0.01 0.2 0.5 1.0
2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
10 mA
30 mA
100 mA
5.0
Figure 3. Collector Cut−Off Region
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
1
10
-5
0.4 0.3 0.1
10
0
10
-1
10
-2
10
-3
10
-4
0.2 0 0.1 0.2 0.40.3 0.60.5
V
CE
= 30 V
T
J
= 125°C
75°C
25°C
I
C
= I
CES
, COLLECTOR CURRENT (A)μI
C
REVERSE FORWARD
I
C
, COLLECTOR CURRENT (mA)
1.0
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50 100
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
0.1 0.2 0.5
Figure 4. “On” Voltages
0.8
0.6
0.4
0.2
0
3.0 300.3
P1-P3P4-P5

MMBT5551M3T5G

Mfr. #:
Buy MMBT5551M3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SOT-723 GP NPN TRANS
Lifecycle:
New from this manufacturer.
Delivery:
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