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IRF9910PBF

P1-P3P4-P6P7-P9P10-P10
IRF9910PbF
4 www.irf.com
Fig 7. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 8. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 11. Maximum Safe Operating Area
Fig. 9. Gate-to-Source Voltage vs Typical Gate Charge
Fig. 10. Gate-to-Source Voltage vs Typical Gate Charge
Fig 12. Maximum Safe Operating Area
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA LIMITED
BY R
DS
(on)
100µsec
T
A
= 25°C
Tj = 150°C
Single Pulse
0 5 10 15 20
Q
G
Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 16V
V
DS
= 10V
I
D
= 9.8A
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
012345678910
Q
G
Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 16V
V
DS
= 10V
I
D
= 8.3A
0 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA LIMITED
BY R
DS
(on)
100µsec
T
A
= 25°C
Tj = 150°C
Single Pulse
www.irf.com 5
IRF9910PbF
Q1 - Control FET
Q2 - Synchronous FET
Typical Characteristics
Fig 13. Normalized On-Resistance vs. Temperature
Fig 14. Normalized On-Resistance vs. Temperature
Fig 15. Typical Source-Drain Diode Forward Voltage
Fig 16. Typical Source-Drain Diode Forward Voltage
Fig 17. Typical On-Resistance vs. Gate Voltage
Fig 18. Typical On-Resistance vs. Gate Voltage
-60 -40 -20 0 20 40 60 80 100120140160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 12A
V
GS
= 10V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
, Source-to-Drain Voltage (V)
0
1
10
100
I
SD
, Reverse Drain Current (A)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
2 3 4 5 6 7 8 9 10
V
GS,
Gate -to -Source Voltage (V)
0
5
10
15
20
25
R
DS(on)
, Drain-to -Source On Resistance (m
Ω
)
I
D
= 12A
T
J
= 25°C
T
J
= 125°C
-60 -40 -20 0 20 40 60 80 100120140160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 10A
V
GS
= 10V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
, Source-to-Drain Voltage (V)
0
1
10
100
I
SD
, Reverse Drain Current (A)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
2 3 4 5 6 7 8 9 10
V
GS,
Gate -to -Source Voltage (V)
0
5
10
15
20
25
30
35
40
R
DS(on)
, Drain-to -Source On Resistance (m
Ω
)
I
D
= 10A
T
J
= 25°C
T
J
= 125°C
IRF9910PbF
6 www.irf.com
Fig 19. Maximum Drain Current vs.
Ambient Temperature
Fig 21. Threshold Voltage vs. Temperature
Q1 - Control FET Q2 - Synchronous FET
Typical Characteristics
Fig 20. Maximum Drain Current vs.
Ambient Temperature
Fig 22. Threshold Voltage vs. Temperature
Fig 23. Maximum Avalanche Energy
vs. Drain Current
Fig 24. Maximum Avalanche Energy
vs. Drain Current
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0
2
4
6
8
10
12
14
I
D
,
Drain Current (A)
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
V
GS(th)
Gate threshold Voltage (V)
I
D
= 250µA
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
20
40
60
80
100
120
E
AS
, Single Pulse Avalanche Energy (mJ)
I
D
TOP 5.5A
6.2A
BOTTOM 9.8A
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0
2
4
6
8
10
12
I
D
,
Drain Current (A)
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
V
GS(th)
Gate threshold Voltage (V)
I
D
= 250µA
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
20
40
60
80
100
120
140
E
AS
, Single Pulse Avalanche Energy (mJ)
I
D
TOP 2.2A
2.6A
BOTTOM 8.3A
P1-P3P4-P6P7-P9P10-P10

IRF9910PBF

Mfr. #:
Buy IRF9910PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 20V 10A/12A 8-SOIC
Lifecycle:
New from this manufacturer.
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