Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IRF9910PBF
P1-P3
P4-P6
P7-P9
P10-P10
www.irf.com
7
IRF9910PbF
Fig 28.
Switching Time Test Circuit
Fig 29.
Switching Time Waveforms
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
T
ype
as
D.U.T
.
Current
Sampling
Resistors
+
-
Fig 27.
Gate Charge Test Circuit
Fig 26.
Unclamped Inductive Test Circuit
and Waveform
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
VG
S
V
GS
Pu
lse Wi
dt
h < 1
µs
Duty F
act
or <
0.1%
V
DD
V
DS
L
D
D.U.
T
+
-
V
GS
V
DS
90%
10%
t
d(
o
n)
t
d(off)
t
r
t
f
Fig 25.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
1
, Rectangular P
ulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGL
E PULSE
( THERMAL RESPONSE )
Not
es
:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
τ
i
/
Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W)
τ
i (sec)
1.688 0.000230
14.468 0.105807
30.264 1.001500
16.106 29.90000
IRF9910PbF
8
www.irf.com
Fig 30.
Peak
Diode
Recovery
dv/dt
Test
Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Circuit
Layout
Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
*
V
GS
=
5V
for
Logic
Level
Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
•
dv/dt
controlled
by
R
G
•
Driver same
type as D.U.T.
•
I
SD
controlled
by Duty Factor
"D"
•
D.U.T. -
Device Under Test
D.U.T
Fig 31.
Gate Charge Waveform
Vds
Vgs
Id
Vgs(
th)
Qgs1
Qgs2
Qgd
Q
godr
www.irf.com
9
IRF9910PbF
SO-8 Package Outline
(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
P1-P3
P4-P6
P7-P9
P10-P10
IRF9910PBF
Mfr. #:
Buy IRF9910PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 20V 10A/12A 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IRF9910PBF