IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN50N170CV1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Reverse Diode (FRED)
(T
J
= 25°C, Unless Otherwise Specified) Characteristic Value
Symbol Test Conditions Min. Typ. Max.
V
F
2.5 3.2 V
T
J
= 150°C 3.2 V
I
RM
40 A
t
rr
255 ns
R
thJC
0.42°C/W
I
F
= 50A,V
GE
= 0V, -di
F
/dt = 500A/μs,
V
R
= 1200V, T
J
= 150°C
I
F
= 50A,V
GE
= 0V, Note 1
SOT-227B miniBLOC (IXYN)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 50A, V
CE
= 10V, Note 1 30 50 S
R
Gi
Gate Input Resistance 2.0
C
ie
s
5500 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 380 pF
C
res
105 pF
Q
g(on)
260 nC
Q
ge
I
C
= 50A, V
GE
= 15V, V
CE
= 0.5 • V
CES
28 nC
Q
gc
110 nC
t
d(on)
20 ns
t
ri
44 ns
E
on
8.7 mJ
t
d(off)
180 ns
t
fi
95 ns
E
of
f
5.6 mJ
t
d(on)
22 ns
t
ri
40 ns
E
on
11.9 mJ
t
d(off)
236 ns
t
fi
160 ns
E
off
8.2 mJ
R
thJC
0.17 °C/W
R
thCS
0.05 °C/W
Inductive load, T
J
= 25°C
I
C
= 50A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 1
Note 2
Inductive load, T
J
= 150°C
I
C
= 50A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 1
Note 2
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
