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IXYN50N170CV1

P1-P3P4-P6P7-P7
© 2017 IXYS CORPORATION, All Rights Reserved
IXYN50N170CV1
Fig. 22. Diode Forward Characteristics
0
40
80
120
160
200
01234567
V
F
(V)
I
F
(A)
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 23. Reverse Recovery Charge vs. -di
F
/dt
2
3
4
5
6
7
8
9
10
400 500 600 700 800 900
-di
F
/ dt (A/μs)
Q
RR
(μC)
I
F
= 100A
25A
50A
T
J
= 150
o
C
V
R
= 1200V
Fig. 23. Reverse Recovery Current vs. -di
F
/dt
20
30
40
50
60
70
400 500 600 700 800 900
di
F
/dt (A/μs)
I
RR
(A)
50A
25A
I
F
= 100A
T
J
= 150
o
C
V
R
= 1200V
Fig. 24. Reverse Recovery Time vs. -di
F
/dt
120
160
200
240
280
320
360
400
400 500 600 700 800 900
-di
F
/dt (A/μs)
t
RR
(ns)
50A
25A
I
F
= 100A
T
J
= 150
o
C
V
R
= 1200V
Fig. 26. Maximum Transient Thermal Impedance
(Diode)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
Z
(th)JC
- K / W
Fig. 25. Dynamic Parameters Q
RR,
I
RR
vs.
Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140 160
T
J
(
o
C)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 1200V
I
F
= 50A
-diF/dt = 500A/μs
P1-P3P4-P6P7-P7

IXYN50N170CV1

Mfr. #:
Buy IXYN50N170CV1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1700V/120A High Volt
Lifecycle:
New from this manufacturer.
Delivery:
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