BTS 736 L2
Semiconductor Group 4 2003-Oct-01
Electrical Characteristics
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = -40...+150°C, V
bb
= 12 V unless otherwise specified
min typ Max
Load Switching Capabilities and Characteristics
On-state resistance (V
bb
to OUT); I
L
= 2 A, V
bb
7V
each channel, T
j
= 25°C:
T
j
= 150°C:
two parallel channels, T
j
= 25°C:
see diagram, page 10
R
ON
--
36
67
18
40
75
20
m
Nominal load current one channel active:
two parallel channels active:
Device on PCB
6)
, T
a
= 85°C, T
j
150°C
I
L(NOM)
4.4
6.7
4.8
7.3
-- A
Output current while GND disconnected or pulled up
7)
;
V
bb
= 30 V, V
IN
= 0, see diagram page 8
I
L(GNDhigh)
-- -- 2 mA
Turn-on time
8)
IN to 90% V
OUT
:
Turn-off time IN to 10% V
OUT
:
R
L
= 12
t
on
t
off
50
50
100
120
200
250
µs
Slew rate on
8)
T
j
= -40°C:
10 to 30% V
OUT
, R
L
= 12 T
j
= 25°C...150°C:
dV/dt
on
0.15
0.15
--
--
1
0.8
V/µs
Slew rate off
8)
T
j
= -40°C:
70 to 40% V
OUT
, R
L
= 12 T
j
= 25°C...150°C:
-dV/dt
off
0.15
0.15
--
--
1
0.8
V/µs
Operating Parameters
Operating voltage Tj=-40
T
j
=25...150°C:
V
bb(on)
4.75 --
--
41
43
V
Overvoltage protection
9)
T
j
=-40°C:
I
bb
= 40 mA T
j
=25...150°C:
V
bb(AZ)
41
43
--
47
--
52
V
Standby current
10
)
T
j
=-40°C...25°C:
V
IN
= 0; see diagram page 10 T
j
=150°C:
I
bb(off)
--
--
10
--
16
50
µA
Leakage output current (included in I
bb(off)
)
VIN = 0
I
L(off)
-- 1 10 µA
Operating current
11)
, V
IN
= 5V,
I
GND
= I
GND1
+ I
GND2
, one channel on:
two channels on:
I
GND
--
--
0.8
1.6
1.4
2.8
mA
6)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air. See page 14
7)
not subject to production test, specified by design
8)
See timing diagram on page 11.
9)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended). See also V
ON(CL)
in table of protection functions and
circuit diagram on page 8.
10)
Measured with load; for the whole device; all channels off
11)
Add I
ST
, if I
ST
> 0
BTS 736 L2
Semiconductor Group 5 2003-Oct-01
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = -40...+150°C, V
bb
= 12 V unless otherwise specified
min typ Max
Protection Functions
12)
Current limit, (see timing diagrams, page 12)
Tj
=-40°C:
Tj
=25°C:
Tj
=+150°C:
I
L(lim)
40
33
23
49
41
29
60
48
35
A
Repetitive short circuit current limit,
T
j
= T
jt
each channel
two parallel channels
(see timing diagrams, page 12)
I
L(SCr)
--
--
30
30
--
--
A
Initial short circuit shutdown time T
j,start
=25°C:
(see timing diagrams on page 12)
t
off(SC)
-- 1.7 -- ms
Output clamp (inductive load switch off)
13)
at V
ON(CL)
= V
bb
- V
OUT
, I
L
= 40 mA
Tj
=-40°C:
Tj
=25°C...150°C:
V
ON(CL)
41
43
--
47
--
52
V
Thermal overload trip temperature T
jt
150 -- -- °C
Thermal hysteresis
T
jt
-- 10 -- K
Reverse Battery
Reverse battery voltage
14)
-V
bb
-- -- 32 V
Drain-source diode voltage (V
out
> V
bb
)
IL
= - 4.0 A, Tj = +150°C
-V
ON
-- 600 -- mV
12)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
13)
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
14)
Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and
circuit page 8).
BTS 736 L2
Semiconductor Group 6 2003-Oct-01
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = -40...+150°C, V
bb
= 12 V unless otherwise specified
min typ Max
Diagnostic Characteristics
Open load detection current, (on-condition)
each channel
I
L (OL)1
100
-- 900 mA
Input and Status Feedback
15)
Input resistance
(see circuit page 8)
R
I
2.5 3.5 6 k
Input turn-on threshold voltage V
IN(T+)
1.7 -- 3.2 V
Input turn-off threshold voltage V
IN(T-)
1.5 -- -- V
Input threshold hysteresis V
IN(T)
-- 0.5 -- V
Off state input current V
IN
= 0.4 V: I
IN(off)
1 -- 50 µA
On state input current V
IN
= 5 V: I
IN(on)
20 50 90 µA
Delay time for status with open load after switch
off; (see diagram on page 13)
t
d(ST OL4)
100 520 900 µs
Status invalid after positive input slope
(open load)
t
d(ST)
-- -- 500 µs
Status output (open drain)
Zener limit voltage I
ST
= +1.6 mA:
ST low voltage I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
6.1
--
--
0.4
V
15)
If ground resistors R
GND
are used, add the voltage drop across these resistors.

BTS736L2

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC HISIDE PWR SWITCH 2CH PDSO-20
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet