© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
1 Publication Order Number:
NCR169D/D
NCR169D
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Features
• Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
• On−State Current Rating of 0.8 Amperes RMS at 80°C
• Surge Current Capability − 10 Amperes
• Immunity to dV/dt − 20 V/μsec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Device Marking: NCR169D, Date Code
• Pb−Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1.)
(T
J
= *40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
V
DRM,
V
RRM
400 Volts
On-State RMS Current
(T
C
= 80°C) 180° Conduction Angles
I
T(RMS)
0.8 Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
J
= 25°C)
I
TSM
10 Amps
Circuit Fusing Consideration (t = 10 ms) I
2
t 0.415 A
2
s
Forward Peak Gate Power
(T
A
= 25°C, Pulse Width v 1.0 μs)
P
GM
0.1 Watt
Forward Average Gate Power
(T
A
= 25°C, t = 20 ms)
P
G(AV)
0.10 Watt
Forward Peak Gate Current
(T
A
= 25°C, Pulse Width v 1.0 μs)
I
GM
1.0 Amp
Reverse Peak Gate Voltage
(T
A
= 25°C, Pulse Width v 1.0 μs)
V
GRM
5.0 Volts
Operating Junction Temperature Range
@ Rate V
RRM
and V
DRM
T
J
−40 to
110
°C
Storage Temperature Range T
stg
−40 to
150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCR
0.8 AMPERES RMS
400 VOLTS
TO−92
(TO−226AA)
CASE 029
STYLE 10
A
G
K
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
NCR
169D
ALYWWG
G
123
http://onsemi.com
