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MRF6P24190HR6

P1-P3P4-P6P7-P9
MRF6P24190HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Designed primarily for large-signal output applications at 2450 MHz. Device
is suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 2450 MHz, V
DD
= 28 Volts, I
DQ
= 1900 mA,
P
out
= 190 Watts
Power Gain — 13.2 dB
Drain Efficiency — 46.2%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
DD
Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +68 Vdc
Gate- Source Voltage V
GS
-0.5, +12 Vdc
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature
(1,2)
T
J
225 °C
CW Operation @ T
C
= 25°C
Derate above 25°C
CW 250
1.3
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
R
θ
JC
0.22
0.24
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6P24190H
Rev. 3, 2/2009
Freescale Semiconductor
Technical Data
MRF6P24190HR6
2450 MHz, 190 W, 28 V
CW
LATERAL N -CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI- 1230
Freescale Semiconductor, Inc., 2006- 2009. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6P24190HR6
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22- A114) 1C (Minimum)
Machine Model (per EIA/JESD22- A115) A (Minimum)
Charge Device Model (per JESD22- C101) III (Minimum)
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 200 µAdc)
V
GS(th)
1 2 3 Vdc
Gate Quiescent Voltage
(3)
(V
DD
= 28 Vdc, I
D
= 1900 mAdc, Measured in Functional Test)
V
GS(Q)
2 2.8 4 Vdc
Drain- Source On- Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
0.1 0.21 0.3 Vdc
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 1.5 — pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1900 mA, P
out
= 40 W Avg., f = 2390 MHz, 2- Carrier
W- CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain G
ps
13 14 16 dB
Drain Efficiency η
D
22 23.5 — %
Intermodulation Distortion IM3 — - 37.5 -35 dBc
Adjacent Channel Power Ratio ACPR — -41 -38 dBc
Input Return Loss IRL — -13 — dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push- pull configuration.
MRF6P24190HR6
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6P24190HR6 Test Circuit Schematic — 2450 MHz
Z16, Z17 0.189″ x 0.782″ Microstrip
Z18, Z19 0.321″ x 0.782″ Microstrip
Z20, Z21 0.630″ x 0.081″ Microstrip
Z22 0.150″ x 0.081″ Microstrip
Z23 1.728″ x 0.085″ Microstrip
Z24 0.122″ x 0.135″ Microstrip
Z25 0.250″ x 0.300″ Microstrip
Z26 0.563″ x 0.135″ Microstrip
Z27 0.380″ x 0.081″ Microstrip
Z28, Z29 0.305″ x 0.057″ Microstrip
PCB Arlon CuClad 250GX-0300 -55 -22, 0.030″, ε
r
= 2.55
Z1 0.340″ x 0.081″ Microstrip
Z2 0.080″ x 0.526″ Microstrip
Z3 0.895″ x 0.135″ Microstrip
Z4 1.736″ x 0.074″ Microstrip
Z5 0.151″ x 0.074″ Microstrip
Z6, Z7 0.505″ x 0.081″ Microstrip
Z8, Z9 0.570″ x 0.282″ Microstrip
Z10, Z11 0.072″ x 0.500″ Microstrip
Z12, Z13 0.078″ x 0.500″ Microstrip
Z14 0.664″ x 0.050″ Microstrip
Z15 0.680″ x 0.050″ Microstrip
RF
INPUT
V
BIAS
Z6 Z8 Z10
C1
Z5 Z7 Z9
C2
Z2
DUT
RF
OUTPUT
Z25 Z27
Z4
Z12
Z11 Z13
C13C16
+
C6
V
BIAS
B3
C15
+
Z15
Z17 Z19 Z21
C4
Z23
C22
V
SUPPLY
C28
+
R1
R2
C8
B4
Z14
Z29
C23 C24 C25 C26
Z16 Z18 Z20
C3
Z22
Z28
C17
V
SUPPLY
C27
+
C7 C18 C19 C20 C21
Z24 Z26
C12
+
C5
B1
C10
C9C11
+
B2
Z1 Z3
C14
Table 5. MRF6P24190HR6 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2, B3, B4 Ferrite Beads 2508051107Y0 Fair- Rite
C1, C2, C3, C4 5.1 pF, Chip Capacitors ATC100B5R1CT500XT ATC
C5, C6, C7, C8 5.6 pF, Chip Capacitors ATC100B5R6CT500XT ATC
C9, C13 0.01 µF, 100 V Chip Capacitors C1825C103J1RAC Kemet
C10, C14, C17, C22 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC Kemet
C11, C15 22 µF, 25 V Tantalum Capacitors T491D226K025AT Kemet
C12, C16 47 µF, 16 V Tantalum Capacitors T491D476K016AT Kemet
C18, C19, C20, C21, C23,
C24, C25, C26
10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C27, C28 330 µF, 63 V Electrolytic Capacitors NACZF331M63V Nippon
R1, R2 240 Ω, 1/4 W Chip Resistors CRCW12062400FKEA Vishay
P1-P3P4-P6P7-P9

MRF6P24190HR6

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Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 2.4GHZ HV6 40W
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