MRF6P24190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2450 MHz
G
ps
, POWER GAIN (dB)
50010
10
50
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power
I
DQ
= 1900 mA
f = 2450 MHz
V
DD
= 12 V
100
40
30
20
10.5
14.5
14
13
12
η
D
, DRAIN EFFICIENCY (%)
η
D
32 V
30 V
32 V
30 V
28 V
13.5
12.5
11.5
11
45
35
25
15
G
ps
, POWER GAIN (dB)
30010
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 V
f = 2450 MHz
100
10.5
14.5
14
13
12
13.5
12.5
11.5
11
1500 mA
1600 mA
2100 mA
2200 mA
1900 mA
G
ps
, POWER GAIN (dB)
10
10
50
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 V
I
DQ
= 1900 mA
f = 2450 MHz
100
40
30
20
10.5
14.5
14
13
12
η
D
, DRAIN EFFICIENCY (%)
η
D
13.5
12.5
11.5
11
45
35
25
15
250
10
8
90
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 28 Vdc, P
out
= 190 W CW, and η
D
= 46.2%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
10
7
10
6
10
4
110 130 150 170 190
MTTF (HOURS)
210 230
10
5
