RMLV0408EGSB-4S2#HA1 Datasheet RMLV0408EGSB-4S2#AA1, RMLV0408EGSA-4S2#AA1, RMLV0408EGSP-4S2#HA0 | P1-P3

R10DS0206EJ0200 Rev.2.00 Page 1 of 10

2016.1.12

RMLV0408E Series

4Mb Advanced LPSRAM (512-kword × 8-bit)

Description

The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s

high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher

performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation;

therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP (II) or 32-pin sTSOP.

Features

 Single 3V supply: 2.7V to 3.6V

 Access time: 45ns (max.)

 Current consumption:

── Standby: 0.4µA (typ.)

 Equal access and cycle times

 Common data input and output

── Three state output

 Directly TTL compatible

── All inputs and outputs

 Battery backup operation

Orderable part number information

Orderable part number

Access

time

Temperature

range

Package Shipping container

RMLV0408EGSA-4S2#AA

*

45 ns -40 ~ +85°C

8mm×13.4mm 32-pin

plastic sTSOP

Tray

RMLV0408EGSA-4S2#KA

*

Embossed tape

RMLV0408EGSB-4S2#AA

*

400-mil 32pin

plastic TSOP (II)

Tray

RMLV0408EGSB-4S2#HA

*

Embossed tape

RMLV0408EGSP-4S2#CA

*

525-mil 32-pin

plastic SOP

Tube

RMLV0408EGSP-4S2#HA

*

Embossed tape

R10DS0206EJ0200

Rev.2.00

2016.1.12

RMLV0408E Series

R10DS0206EJ0200 Rev.2.00 Page 2 of 10

2016.1.12

Pin Arrangement

Pin Description

Pin name Function

V

CC

Power supply

V

SS

Ground

A0 to A18 Address input

I/O0 to I/O7 Data input/output

CS# Chip select

WE# Write enable

OE# Output enable

32-pin sTSOP

A11

A9

A8

A13

WE#

A18

A15

Vcc

A17

A16

A14

A12

A7

A6

A5

A4

OE#

A10

CS#

I/O7

I/O6

I/O5

I/O4

I/O3

Vss

I/O2

I/O1

I/O0

A0

A1

A2

A3

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

(Top view) (Top view)

32-pin SOP

32-pin TSOP (II)

A18

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

I/O1

I/O2

Vss

V

cc

A15

A17

WE#

A13

A8

A9

A11

OE#

A10

CS#

I/O7

I/O6

I/O5

I/O4

I/O3

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

RMLV0408E Series

R10DS0206EJ0200 Rev.2.00 Page 3 of 10

2016.1.12

Block Diagram

Operation Table

CS# WE# OE# I/O0 to I/O7 Operation

H X X High-Z Standby

L H L Dout Read

L L X Din Write

L H H High-Z Output disable

Note 1. H: V

IH

L:V

IL

X: V

IH

or V

IL

Absolute Maximum Ratings

Parameter Symbol Value unit

Power supply voltage relative to V

SS

V

CC

-0.5 to +4.6 V

Terminal voltage on any pin relative to V

SS

V

T

-0.5

*2

to V

CC

+0.3

*3

V

Power dissipation P

T

0.7 W

Operation temperature Topr -40 to +85 °C

Storage temperature range Tstg -65 to +150 °C

Storage temperature range under bias Tbias -40 to +85 °C

Note 2. -3.0V for pulse ≤ 30ns (full width at half maximum)

3. Maximum voltage is +4.6V.

Memory Matrix

A0

A4

A5

A6

A7

A8

A9

A10

A11

A12

A13

2,048 x 2,048

Row

Decode

r

・

Input

Data

Control

A

18A16 A15 A14

A

3 A2 A1

・

I/O0

I/O7

CS#

WE#

OE#

V

CC

V

SS

Timing Pulse Generato

r

Read/Write Control

Column I/O

A17

Column Decode

r

RMLV0408EGSB-4S2#HA1

RMLV0408EGSB-4S2#HA1

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