IXFR140N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300s; duty cycle, d 2%.
ISOPLUS247 (IXFR) Outline
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 70A, Note 1 50 90 S
C
iss
14.8 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1830 pF
C
rss
55 pF
t
d(on)
30 ns
t
r
30 ns
t
d(off)
100 ns
t
f
20 ns
Q
g(on)
185 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 70A 72 nC
Q
gd
60 nC
R
thJC
0.42C/W
R
thCS
0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 140 A
I
SM
Repetitive, pulse width limited by T
JM
560 A
V
SD
I
F
= 70A, V
GS
= 0V, Note 1 1.3 V
t
rr
200 ns
Q
RM
0.6 μC
I
RM
6.0
A
I
F
= 25A, -di/dt = 100A/s
V
R
= 100V, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 70A
R
G
= 1 (External)
1 - Gate 2 - Drain
3 - Source 4 - Isolated
