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IXFR140N30P

P1-P3P4-P5
IXFR140N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
3.54.04.55.05.56.06.57.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 70A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
25μs
1ms
100μs
R
DS(on)
Limit
10ms
DC
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
© 2017 IXYS CORPORATION, All rights reserved
IXFR140N30P
IXYS REF: F_140N30P (93)5-13-08-B
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
P1-P3P4-P5

IXFR140N30P

Mfr. #:
Buy IXFR140N30P
Manufacturer:
Littelfuse
Description:
MOSFET 82 Amps 300V 0.026 Ohm Rds
Lifecycle:
New from this manufacturer.
Delivery:
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