BZX84C12LT1G Datasheet SZBZX84C36LT3G, BZX84C10LT1G, BZX84C12LT1G | P1-P3

October, 2016 − Rev. 22

1 Publication Order Number:

BZX84C2V4LT1/D

BZX84BxxxLT1G,

BZX84CxxxLT1G Series,

SZBZX84BxxxLT1G,

SZBZX84CxxxLT1G Series

Zener Voltage Regulators

250 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

Features

• 250 mW Rating on FR−4 or FR−5 Board

• Zener Breakdown Voltage Range − 2.4 V to 75 V

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

• ESD Rating of Class 3 (> 16 kV) per Human Body Model

• Tight Tolerance Series Available (See Page 4)

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics

CASE:

Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily Solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

†

ORDERING INFORMATION

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 o

this data sheet.

DEVICE MARKING INFORMATION

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

BZX84CxxxLT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

BZX84BxxxLT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

BZX84CxxxLT3G 10,000 /

Tape & Reel

BZX84BxxxLT3G 10,000 /

Tape & Reel

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

CASE 318

STYLE 8

Cathode

Anode

MARKING DIAGRAM

XXXMG

XXX = Device Code

M = Date Code*

G = Pb−Free Package

*Date Code orientation may vary depending up-

on manufacturing location.

(Note: Microdot may be in either location)

SZBZX84BxxxLT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SZBZX84CxxxLT3G 10,000 /

Tape & Reel

SOT−23

(Pb−Free)

SZBZX84CxxxLT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SZBZX84BxxxLT3G 10,000 /

Tape & Reel

SOT−23

(Pb−Free)

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol Max Unit

Total Power Dissipation on FR−5 Board,

(Note 1) @ T

= 25°C

Derated above 25°C

Thermal Resistance, Junction−to−Ambient

250

2.0

500

mW/°C

°C/W

Total Power Dissipation on Alumina

Substrate, (Note 2) @ T

= 25°C

Derated above 25°C

Thermal Resistance, Junction−to−Ambient

300

2.4

417

mW/°C

°C/W

Junction and Storage Temperature Range T

, T

stg

−65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 X 0.75 X 0.62 in.

2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T

= 25°C

unless otherwise noted, V

= 0.90 V Max. @ I

= 10 mA)

Symbol

Parameter

Reverse Zener Voltage @ I

Reverse Current

Maximum Zener Impedance @ I

Reverse Leakage Current @ V

Reverse Voltage

Forward Current

Forward Voltage @ I

Maximum Temperature Coefficient of V

C Max. Capacitance @ V

= 0 and f = 1 MHz

Zener Voltage Regulator

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T

= 25°C unless otherwise noted, V

= 0.90 V Max. @ I

= 10 mA)

(Devices listed in bold, italic are ON Semiconductor Preferred devices.)

Device*

Device

Marking

(Volts)

ZT1

=5mA

(Note 3)

ZT1

(W)

@ I

ZT1

5 mA

(V)

ZT2

=1mA

(Note 3)

ZT2

(W)

@ I

ZT2

1 mA

(V)

ZT3

=20mA

(Note 3)

ZT3

(W)

@ I

ZT3

20 mA

Max Reverse

Leakage

Current

(mV/k)

@ I

ZT1

= 5 mA

C (pF)

@ V

= 0

f = 1 MHz

Min Nom Max Min Max Min Max

Volts

Min Max

BZX84C2V4LT1G Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 −3.5 0 450

BZX84C2V7LT1G Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 −3.5 0 450

BZX84C3V0LT1G Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 −3.5 0 450

BZX84C3V3LT1G Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450

BZX84C3V6LT1G Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450

BZX84C3V9LT1G Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450

BZX84C4V3LT1G W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450

BZX84C4V7LT1/T3G Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260

BZX84C5V1LT1/T3G Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225

BZX84C5V6LT1/T3G Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200

BZX84C6V2LT1/T3G Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185

BZX84C6V8LT1/T3G Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155

BZX84C7V5LT1G Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140

BZX84C8V2LT1G Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135

BZX84C9V1LT1/T3G Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130

BZX84C10LT1G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130

BZX84C11LT1G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130

BZX84C12LT1G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130

BZX84C13LT1G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120

BZX84C15LT1/T3G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110

BZX84C16LT1G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105

BZX84C18LT1/T3G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100

BZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85

BZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85

BZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80

Device*

Device

Marking

Below

ZT1

=2mA

ZT1

Below

@ I

ZT1

2 mA

Below

ZT2

= 0.1 m-

ZT2

Below

@ I

ZT4

0.5 mA

Below

ZT3

=10mA

ZT3

Below

@ I

ZT3

10 mA

Max Reverse

Leakage

Current

(mV/k) Below

@ I

ZT1

= 2 mA

C (pF)

@ V

= 0

f = 1 MHz

Min Nom Max Min Max Min Max

(V)

Min Max

BZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70

BZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70

BZX84C33LT1/T3G Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70

BZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70

BZX84C39LT1G Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45

BZX84C43LT1G Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40

BZX84C47LT1G Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40

BZX84C51LT1G Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40

BZX84C56LT1G Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40

BZX84C62LT1G Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35

BZX84C68LT1G Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35

BZX84C75LT1G Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35

3. Zener voltage is measured with a pulse test current I

at an ambient temperature of 25°C.

*Includes SZ-prefix devices where applicable.

P1-P3 P4-P6 P7-P7

BZX84C12LT1G

Mfr. #:

Buy BZX84C12LT1G

Manufacturer:

ON Semiconductor

Description:

Zener Diodes 12V 300mW

Lifecycle:

New from this manufacturer.

Delivery:

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BZX84C12LT1G

BZX84C12LT1G

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