BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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4
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
Device
Device
Marking
V
Z
(Volts) @ I
ZT
= 5 mA
(Note 4)
Z
ZT
(W) @
I
ZT
= 5 mA
(Note 4)
Max Reverse
Leakage
Current
q
VZ
(mV/k)
@ I
ZT
= 5 mA
C (pF)
@ V
R
=0,
f = 1 MHz
I
R
@
V
R
Min Nom Max Max
mA
Volts Min Max
BZX84B3V3LT1G T2A 3.23 3.3 3.37 95 5 1 −3.5 0 450
BZX84B4V7LT1G T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260
BZX84B5V1LT1G T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225
BZX84B5V6LT1G T12 5.49 5.6 5.71 40 1 2 −2 2.5 200
BZX84B6V2LT1G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185
BZX84B6V8LT1G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155
BZX84B7V5LT1G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140
BZX84B8V2LT1G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135
BZX84B9V1LT1G, T3G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130
BZX84B10LT1G T2E 9.8 10 10.2 20 0.2 7 4.5 8 130
BZX84B12LT1G T18 11.8 12 12.2 25 0.1 8 6 10 130
BZX84B15LT1G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 110
BZX84B16LT1G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105
BZX84B18LT1G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100
BZX84B22LT1G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85
BZX84B24LT1G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80
4. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C.
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
Device*
Device
Marking
V
Z
(Volts) @ I
ZT
= 2 mA
(Note 4)
Z
ZT
(W) @
I
ZT
= 2 mA
(Note 4)
Max Reverse
Leakage
Current
q
VZ
(mV/k)
@ I
ZT
= 2 mA
C (pF)
@ V
R
=0,
f = 1 MHz
I
R
@
V
R
Min Nom Max Max
mA
Volts Min Max
BZX84B27LT1G T27 26.5 27 27.5 80 0.05 18.9 21.4 25.3 70
*Includes SZ-prefix devices where applicable.
