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HUFA76419S3ST

P1-P3P4-P6P7-P9P10-P10
©2001 Fairchild Semiconductor Corporation HUFA76419P3, HUFA76419S3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
110100
200
1
20
0
100µs
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED T
C
= 25
o
C
SINGLE PULSE
10
60
0.001 0.01 0.1 1 1
0
1
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
10
20
30
40
50
60
1234
5
0
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
10
20
30
40
50
60
0123
4
0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
30
40
50
24681
0
20
I
D
= 10A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 29A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
I
D
= 19A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
1.0
1.5
2.0
2.5
-80 -40 0 40 80 120 160 20
0
0.5
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
= 29A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
HUFA76419P3, HUFA76419S3S
©2001 Fairchild Semiconductor Corporation HUFA76419P3, HUFA76419S3S Rev. B
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.6
0.8
1.0
1.2
-80 -40 0 40 80 120 160 20
0
0.4
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250µA
THRESHOLD VOLTAGE
1.0
1.1
1.2
-80 -40 0 40 80 120 160 200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
100
1000
0.1 1 10
2000
10
6
0
C, CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
≅
C
DS
+ C
GD
C
RSS
=
C
GD
2
4
6
8
10
0 5 10 15 20 2
5
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 29A
I
D
= 19A
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 10A
50
100
150
200
250
0 102030405
0
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
Ω
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 18A
t
r
t
f
t
d(ON)
t
d(OFF)
50
100
150
0102030405
0
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
Ω
)
V
GS
= 10V, V
DD
= 30V, I
D
= 29A
t
d(OFF)
t
r
t
d(ON)
t
f
HUFA76419P3, HUFA76419S3S
©2001 Fairchild Semiconductor Corporation HUFA76419P3, HUFA76419S3S Rev. B
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
FIGURE 21. SWITCHING TIME TEST CIRCUIT FIGURE 22. SWITCHING TIME WAVEFORM
t
P
V
GS
0.01Ω
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
V
GS
= 1V
Q
g(5)
V
GS
= 5V
Q
g(TOT)
V
GS
= 10
V
V
DS
V
GS
I
g(REF)
0
0
Q
gs
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
HUFA76419P3, HUFA76419S3S
P1-P3P4-P6P7-P9P10-P10

HUFA76419S3ST

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ON Semiconductor
Description:
MOSFET N-CH 60V 29A D2PAK
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