OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MJL1302AG

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 11
1 Publication Order Number:
MJL3281A/D
MJL3281A (NPN)
MJL1302A (PNP)
Complementary Bipolar
Power Transistors
Features
• Exceptional Safe Operating Area
• NPN/PNP Gain Matching within 10% from 50 mA to 5 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency
• These Devices are Pb−Free and are RoHS Compliant*
Benefits
• Reliable Performance at Higher Powers
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal
• Greater Dynamic Range
• High Amplifier Bandwidth
Applications
• High−End Consumer Audio Products
♦ Home Amplifiers
♦ Home Receivers
• Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
260 Vdc
Collector−Base Voltage V
CBO
260 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
260 Vdc
Collector Current − Continuous I
C
15 Adc
Collector Current − Peak (Note 1) I
CM
25 Adc
Base Current − Continuous I
B
1.5 Adc
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
P
D
200
1.43
Watts
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−   65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case R
θ
JC
0.625 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
MJLxxxxA
AYYWWG
Device Package Shipping
ORDERING INFORMATION
TO−264
CASE 340G
STYLE 2
2
1
15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
260 VOLTS
200 WATTS
3
MARKING DIAGRAM
xxxx = 3281 or 1302
A = Location Code
YY = Year
WW = Work Week
G = Pb−Free Package
1
BASE
2 COLLECTOR
3
EMITTER
http://onsemi.com
MJL3281AG TO−264
(Pb−Free)
25 Units/Rail
MJL1302AG TO−264
(Pb−Free)
25 Units/Rail
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN
MJL3281A (NPN) MJL1302A (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
260 −
Vdc
Collector Cutoff Current
(V
CB
= 260 Vdc, I
E
= 0)
I
CBO
− 50
μAdc
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
I
EBO
− 5
μAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 100 Vdc, t = 1 s (non−repetitive)
I
S/b
4
1
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 500 mAdc, V
CE
= 5 Vdc)
(I
C
= 1 Adc, V
CE
= 5 Vdc)
(I
C
= 3 Adc, V
CE
= 5 Vdc)
(I
C
= 5 Adc, V
CE
= 5 Vdc)
(I
C
= 8 Adc, V
CE
= 5 Vdc)
h
FE
75
75
75
75
45
150
150
150
150
−
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 1 Adc)
V
CE(sat)
− 3
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1 Adc, V
CE
= 5 Vdc, f
test
= 1 MHz)
f
T
30 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− 600
pF
MJL3281A (NPN) MJL1302A (PNP)
http://onsemi.com
3
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f, CURRENT BANDWIDTH PRODUCT (MHz)
T
PNP MJL1302A
f, CURRENT BANDWIDTH PRODUCT (MHz)
T
NPN MJL3281A
I
C
, COLLECTOR CURRENT (AMPS)
0.1 1.0 10
50
40
30
20
10
0
60
40
30
0
10
0.1 1.0 10
V
CE
= 10 V
5 V
T
J
= 25°C
f
test
= 1 MHz
20
V
CE
= 10 V
5 V
T
J
= 25°C
f
test
= 1 MHz
50
Figure 3. DC Current Gain Figure 4. DC Current Gain
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (AMPS)
PNP MJL1302A NPN MJL3281A
1000
100
10
101.00.1
T
J
= 100°C
25°C
-25°C
V
CE
= 5.0 V
100
TYPICAL CHARACTERISTICS
Figure 5. Typical Saturation Voltages
I
C
, COLLECTOR CURRENT (AMPS)
SATURATION VOLTAGE (VOLTS)
Figure 6. Typical Saturation Voltages
I
C
, COLLECTOR CURRENT (AMPS)
SATURATION VOLTAGE (VOLTS)
PNP MJL1302A NPN MJL3281A
3.0
2.5
2.0
1.5
1.0
0.5
0
100101.00.1
2.5
2.0
1.5
1.0
0
100101.00.1
0.5
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
V
CE(sat)
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
V
CE(sat)
0.05
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (AMPS)
1000
100
10
101.00.1
T
J
= 100°C
25°C
-25°C
V
CE
= 5.0 V
100
0.05
P1-P3P4-P5

MJL1302AG

Mfr. #:
Buy MJL1302AG
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 15A 230V 200W PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet