MJL1302AG

MJL3281A (NPN) MJL1302A (PNP)
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Typical BaseEmitter Voltage
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(on)
, BASE-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical BaseEmitter Voltage
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(on)
, BASE-EMITTER VOLTAGE (VOLTS)
PNP MJL1302A NPN MJL3281A
10
1.0
0.1
100101.00.1
T
J
= 25°C
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
10
1.0
0.1
100101.00.1
T
J
= 25°C
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
Figure 9. MJL1302A Typical Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 10. MJL3281A Typical Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
10000
1000
100
100101.00.1
10000
1000
100
100101.00.1
T
J
= 25°C
f
test
= 1 MHz
C
ib
C
ob
T
J
= 25°C
f
test
= 1 MHz
C
ib
C
ob
PNP MJL1302A NPN MJL3281A
Figure 11. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
V
CE
lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
The data of Figure 11 is based on T
J(pk)
= 150°C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
100
10
1.0
0.1
100101.0 1000
10 ms
50 ms
250 ms
1 sec
MJL3281A (NPN) MJL1302A (PNP)
http://onsemi.com
5
PACKAGE DIMENSIONS
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
TO3PBL (TO264)
CASE 340G02
ISSUE J
DIM
A
MIN MAX MIN MAX
INCHES
28.0 29.0 1.102 1.142
MILLIMETERS
B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
E 1.9 2.1 0.075 0.083
F 2.2 2.4 0.087 0.102
G 5.45 BSC 0.215 BSC
H 2.6 3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L 11.2 REF 0.411 REF
N 4.35 REF 0.172 REF
P 2.2 2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.25 REF 0.089 REF
U 6.3 REF 0.248 REF
W 2.8 3.2 0.110 0.125
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
0.25 (0.010)
M
TB
M
J
R
H
N
U
L
P
A
K
C
E
F
D
G
W
2 PL
3 PL
0.25 (0.010)
M
TB
S
123
B
T
Q
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MJL3281A/D
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MJL1302AG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 15A 230V 200W PNP
Lifecycle:
New from this manufacturer.
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