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STI55NF03L

P1-P3P4-P6P7-P9P10-P12
May 2011 Doc ID 018838 Rev 1 1/12
12
STI55NF03L
N-channel 30 V, 0.01 Ω, 55 A, I²PAK
STripFET™ II Power MOSFET
Features
■ Optimized for high switching operation
■ Low gate charge
■ Logic level gate drive
Application
■ Switching applications
– Automotive
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps allowing remarkable
manufacturing reproducibility.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
max I
D
STI55NF03L 30 V < 0.013 Ω 55 A
I²PAK
1
2
3
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Table 1. Device summary
Order code Marking Package Packaging
STI55NF03L 55NF03L I²PAK Tube
www.st.com
Contents STI55NF03L
2/12 Doc ID 018838 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STI55NF03L Electrical ratings
Doc ID 018838 Rev 1 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
GS
Gate-source voltage ± 16 V
I
D
Drain current (continuous) at T
C
= 25 °C 55 A
I
D
Drain current (continuous) at T
C
= 100 °C 39 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 220 A
P
TOT
Total dissipation at T
C
= 25 °C 80 W
Derating factor 0.53 W/°C
E
AS
(2)
2. Starting T
j
= 25 °C, I
D
= 32.5 A, V
DD
= 45 V
Single pulse avalanche energy 120 mJ
T
stg
Storage temperature
– 60 to 175 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 1.875 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
P1-P3P4-P6P7-P9P10-P12

STI55NF03L

Mfr. #:
Buy STI55NF03L
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 30 V, 0.01 Ohm, 55 A, I2PAK STripFET(TM) II Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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