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STI55NF03L
P1-P3
P4-P6
P7-P9
P10-P12
Electrical ch
aracteristics
STI55NF03L
4/12
Doc ID 01883
8 Re
v 1
2 Electrical
characteristics
(T
CASE
= 25 °C unless otherwise specified)
T
able 4.
On/off state
s
Symbol
P
arameter
T
est cond
itions
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown v
oltag
e
I
D
= 250 µA, V
GS
= 0
30
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= max rating
1
µA
V
DS
= max rating
,T
C
=125 °C
10
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 16 V
± 100
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250 µA
1.5
2.5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V
, I
D
= 27.5 A
V
GS
= 4.5 V
, I
D
= 27.5 A
0.01
0.013
0.013
0.02
Ω
T
able 5.
Dynamic
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
C
iss
Input capacitance
V
DS
= 25 V
, f = 1 MHz,
V
GS
= 0
1265
pF
C
oss
Output capacitance
435
pF
C
rss
Re
verse tran
sf
er
capacitance
115
pF
Q
g
T
otal gate char
ge
V
DD
= 24V
, I
D
= 55 A,
V
GS
= 4.5 V
(see Figure 14)
20
27
nC
Q
gs
Gate-source charge
7
nC
Q
gd
Gate-dra
in charge
10
nC
STI55NF03L
Electrical charac
teristics
Doc ID 018838 Rev 1
5/12
T
able 6.
Switching ti
mes
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
t
d(on)
t
r
T
ur
n-on dela
y time
Rise time
V
DD
= 15 V
, I
D
= 27.5 A
R
G
=4
.
7
Ω
V
GS
= 10 V
(see Figure 13)
28
400
ns
ns
t
d(off)
t
f
T
ur
n-off-dela
y time
F
all ti
me
V
DD
= 15 V
, I
D
= 27.5 A
R
G
=4
.
7
Ω,
V
GS
= 10 V
(see Figure 13)
25
50
ns
ns
T
able 7.
Source drain diode
Symbol
P
arameter
T
est conditions
M
in.
T
yp.
Max
Unit
I
SD
Source-drain current
55
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
(pulsed)
220
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
F
orward on v
o
ltage
I
SD
= 55 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Re
verse reco
ver
y time
Re
verse reco
ver
y charge
Re
verse reco
ver
y current
I
SD
= 55 A, V
DD
= 30 V
di/dt = 100 A/µs
,
T
j
= 150 °C
(see Figure 15)
70
160
4.5
ns
nC
A
Electrical ch
aracteristics
STI55NF03L
6/12
Doc ID 01883
8 Re
v 1
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristi
cs
Figure 5.
T
ransfer characte
ristics
Figure 6.
Normalized B
VDSS
vs temperature
Figure 7.
Static drain-sour
ce on resistance
)
$
6
'3
6
!
6
$3
6
!-V
P1-P3
P4-P6
P7-P9
P10-P12
STI55NF03L
Mfr. #:
Buy STI55NF03L
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 30 V, 0.01 Ohm, 55 A, I2PAK STripFET(TM) II Power MOSFET
Lifecycle:
New from this manufacturer.
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