2004 Jan 13 2
NXP Semiconductors Product data sheet
PNP BISS transistor PMMT591A
FEATURES
• High current (max. 1 A)
• Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
• Battery powered units where high current and low power
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT23 plastic package. NPN
complement: PMMT491A.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE
(1)
PMMT591A 9B*
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM256
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMMT591A − plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −40 V
V
CEO
collector-emitter voltage open base − −40 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −1 A
I
CM
peak collector current − −2 A
I
BM
peak base current − −1 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
