2004 Jan 13 3
NXP Semiconductors Product data sheet
PNP BISS transistor PMMT591A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −30 V − −100 nA
I
CEO
collector cut-off current I
B
= 0; V
CE
= −30 V − −100 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5 V − −100 nA
h
FE
DC current gain V
CE
= −5 V; note 1
I
C
= −1 mA 300 −
I
C
= −100 mA 300 800
I
C
= −500 mA 250 −
I
C
= −1 A 160 −
V
CEsat
collector-emitter saturation voltage note 1
I
C
= −100 mA; I
B
= −1 mA − −200 mV
I
C
= −500 mA; I
B
= −20 mA − −350 mV
I
C
= −1 A; I
B
= −100 mA − −500 mV
V
BEsat
base-emitter saturation voltage I
C
= −1 A; I
B
= −50 mA; note 1 − −1.1 V
V
BE
base-emitter voltage V
CE
= −5 V; I
C
= −1 A; note 1 − −1 V
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= −10 V; f = 1 MHz − 12 pF
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V; f = 100 MHz 150 − MHz
