16
4688D–RFID–03/07
U3280M
Power Management
Field-on detection voltage V
DD
> 1.8V V
FDon
2.3 2.5 2.9 V
Field-off detection voltage V
DD
> 1.8V V
FDoff
0.8 V
Voltage drop at
power-supply switch
I
S
= 0.5 mA,
V
Batt
= 2 V
V
SD
150 mV
Coil Inputs: Coil 1 and Coil 2
Coil input current I
CI
20 mA
Input capacitance C
IN
30 pF
Coil voltage stroke during
modulation
V
CU
> 5V
I
coil
= 3 to 20 mA
V
CMS
1.8 2.3 4.0 V
Pin MOD
Input LOW voltage V
IL
V
IH
0.2 ×
V
DD
V
Input LOW voltage V
IH
0.8 ×
V
DD
V
DD
V
Input leakage current I
Ileakage
10 nA
Pin NGAP/FC
Output LOW current
V
DD
= 2.0V
V
OL
= 0.2 × V
DD
I
OL
0 . 0 8 0 . 2 0 . 3 m A
Output HIGH current
V
DD
= 2.0V
V
OH
= 0.8 × V
DD
I
OH
–0.06 –0.15 –0.25 m A
Serial Interface I/O Pins SCL and SDA
Input LOW voltage V
IL
V
IH
0.3 ×
V
DD
V
Input HIGH voltage V
IH
0.7 ×
V
DD
V
DD
V
Input leakage current I
Ileakage
10 nA
Output LOW current
V
DD
= 2.0V
V
OL
= 0.2V
DD
V
DD
= 6.0V
I
OL
0.7
2.8
0.9
3.5
1.1
4.2
mA
mA
Output HIGH current
V
DD
= 2.0V
V
OH
= 0.8 V
DD
V
DD
= 6.0V
I
OH
–0.5
–1.8
–0.6
–2.2
–0.7
–2.6
mA
mA
8. DC Characteristics (Continued)
Supply voltage V
DD
= 1.8V to 6.5V, V
SS
= 0V, T
amb
= –40°C to 85°C unless otherwise specified
Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit
17
4688D–RFID–03/07
U3280M
9. AC Characteristics
Supply voltage V
DD
= 1.8V to 6.5V, V
SS
= 0V, T
amb
= –40°C to 85°C unless otherwise specified
Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit
Serial Interface Timing
SCL clock frequency f
SCL
0 100 kHz
Clock low time t
LOW
4.7 µs
Clock high time t
HIGH
4.0 µs
SDA and SCL rise time t
R
1000 ns
SDA and SCL fall time t
F
300 ns
START condition setup time t
SUSTA
4.7 µs
START condition hold time t
HDSTA
4.0 µs
Data input setup time t
SUDAT
250 ns
Data input hold time t
HDDAT
0ns
STOP condition setup time t
SUSTO
4.7 µs
Bus free time t
BUF
4.7 µs
Input filter time t
I
100 ns
Data output hold time t
DH
300 1000 ns
Coil Inputs
Coil frequency f
COIL
100 125 150 kHz
Gap Detection
Delay field off to GAP = 0 V
coilGap
< 0.7 V
DC
T
FGAP0
10 50 µs
Delay field on to GAP = 1 V
coilGap
> 3 V
DC
T
FGAP1
150µs
Power Management
Battery to field switch delay t
BFS
1000 µs
Field to battery switch delay V
Batt
= 6.5V t
FBS
51030ms
EEPROM
Endurance Erase/write cycles E
D
500000 Cycles
Data erase/write cycle time For 16-bit access t
DEW
912ms
Data retention time T
amb
= 25°Ct
DR
10 years
Power up to read operation t
PUR
0.2 ms
Power up to write operation t
PUw
0.2 ms
Reset
Power-on reset V
DDrise
= 0 to 2V t
rise
10 ms
NRST VIl < 0.2 V
DD
t
res
s
18
4688D–RFID–03/07
U3280M
Figure 9-1. Typical Reset Delay After Switching V
DD
On
Figure 9-2. Typical Reset Delay After Switching V
DD
On
Figure 9-3. V
DD
Rise Time to Ensure Power-on Reset
0
100
200
300
400
500
600
1.0 2.0 3.0 4.0 5.0 6.0
V
DD
NRST
t
RESDEL
V
DD
(V)
t
RESDEL
(µs)
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1.0 2.0 3.0 4.0 5.0 6.0
V
DD
(V)
t
RESDEL
(ms)
V
DD
NRST
5 ms
t
RESDEL
0
1
2
3
4
5
6
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
Not allowed
t
rise
(ms)
V
DD
(V)

U3280M-NFBG3

Mfr. #:
Manufacturer:
Description:
IC RFID TRANSP 100-150KHZ 16SSO
Lifecycle:
New from this manufacturer.
Delivery:
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