BUK7907-55AIE,127

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
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Kind regards,
Team Nexperia
BUK7907-55AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 9 February 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
[1] Current is limited by power dissipation chip rating.
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
25 °C; T
j
175 °C - - 55 V
I
D
drain current V
GS
=10V; T
mb
=2C;
see Figure 2; see Figure 3
[1] - - 140 A
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=50A;
T
j
= 25 °C; see Figure 7;
see Figure 8
-5.87m
I
D
/I
sense
ratio of drain current
to sense current
T
j
>-5C; T
j
< 175 °C;
V
GS
>10V
450 500 550
BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 2 of 14
NXP Semiconductors
BUK7907-55AIE
N-channel TrenchPLUS standard level FET
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1G gate
SOT263 B
(TO-220)
2 ISENSE Sense current
3D drain
4 KS Kelvin source
5S source
mb D mounting base; connected to
drain
13245
mb
MBL368
d
s
I
sense
Kelvin source
g
Table 3. Ordering information
Type number Package
Name Description Version
BUK7907-55AIE TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead
TO-220
SOT263B

BUK7907-55AIE,127

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET TRENCHPLUS MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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