BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 6 of 14
NXP Semiconductors
BUK7907-55AIE
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 55 - - V
I
D
=0.25mA; V
GS
=0V; T
j
=-55°C 50 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 9
234V
I
D
=1mA; V
DS
= V
GS
; T
j
= 175 °C;
see Figure 9
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C;
see Figure 9
--4.4V
I
DSS
drain leakage current V
DS
=55V; V
GS
=0V; T
j
=25°C - 0.1 10 µA
V
DS
=55V; V
GS
=0V; T
j
= 175 °C - - 250 µA
V
(BR)GSS
gate-source breakdown
voltage
I
G
=1mA; V
DS
=0V; T
j
<175°C;
T
j
>-55°C
20 22 - V
I
G
=-1mA; V
DS
=0V; T
j
< 175 °C;
T
j
>-55°C
20 22 - V
I
GSS
gate leakage current V
DS
=0V; V
GS
=10V; T
j
= 25 °C - 22 1000 nA
V
DS
=0V; V
GS
=-10V; T
j
= 25 °C - 22 1000 nA
V
DS
=0V; V
GS
=10V; T
j
=175°C --10µA
V
DS
=0V; V
GS
=-10V; T
j
=175°C --10µA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=50A; T
j
=25°C;
see Figure 7; see Figure 8
-5.87mΩ
V
GS
=10V; I
D
=50A; T
j
= 175 °C;
see Figure 7
; see Figure 8
--14mΩ
I
D
/I
sense
ratio of drain current to
sense current
V
GS
>10V; T
j
>-55°C; T
j
< 175 °C 450 500 550
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=44V; V
GS
=10V;
T
j
=25°C; see Figure 14
-116-nC
Q
GS
gate-source charge - 19 - nC
Q
GD
gate-drain charge - 50 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 12
- 4500 - pF
C
oss
output capacitance - 960 - pF
C
rss
reverse transfer
capacitance
- 510 - pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
=10Ω; T
j
=25°C
-36-ns
t
r
rise time - 115 - ns
t
d(off)
turn-off delay time - 159 - ns
t
f
fall time - 111 - ns
L
D
internal drain
inductance
from upper edge of drain mounting base to
centre of die; T
j
=25°C
-2.5-nH
L
S
internal source
inductance
from source lead to source bond pad;
T
j
=25°C
-7.5-nH
