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GP1S52VJ000F
P1-P3
P4-P6
P7-P9
P10-P12
4
Sheet No.: D3-A02501
F
EN
GP1S52VJ000F
■
Absolute Maximum Ratings
■
Electro-optical Characteristics
(T
a
=
25
˚
C)
Parameter
Symbol
Rating
Unit
Input
∗
1
Forward current
I
F
50
mA
∗
1, 2
Peak forward current
I
FM
1A
Reverse voltage
V
R
6V
Power dissipation
P
75
mW
Output
Collector-emitter voltage
V
CEO
35
V
Emitter-collector voltage
V
ECO
6V
Collector current
I
C
20
mA
∗
1
Collector power dissipation
P
C
75
mW
Operating temperature
T
opr
−
25 to
+
85
˚
C
Storage temperature
T
stg
−
40 to
+
100
˚
C
∗
3
Soldering temperature
T
sol
260
˚
C
∗
1
Refer to Fig. 1, 2, 3
∗
2 Pulse width
≤
100
μ
s, Duty ratio
=
0.01
∗
3 For 5s or less
(T
a
=
25
˚
C)
Parameter
Symbol
Condition
MIN.
TYP
.
MAX.
Unit
Input
Forward voltage
V
F
I
F
=
20mA
−
1.25
1.4
V
Peak forward voltage
V
FM
I
FM
=
0.5A
3
4
V
Reverse current
I
R
V
R
=
3V
−−
10
μ
A
Output
Collector dark current
I
CEO
V
CE
=
20V
−
1
100
nA
T
ransfer
charac-
teristics
Collector current
I
C
V
CE
=
5V
, I
F
=
20mA
0.5
−
5m
A
Collector-emitter saturation voltage
V
CE(sat)
I
F
=
40mA, I
C
=
0.5mA
−−
0.4
V
Response time
Rise time
t
r
V
CE
=
2V
, I
C
=
2mA, R
L
=
100
Ω
−
31
5
μ
s
Fall time
t
f
−
42
0
5
Sheet No.: D3-A02501
F
EN
GP1S52VJ000F
Fig.5 Collector Current vs.
Forward
Current
Fig.6 Collector Current vs.
Collector-emitter
V
oltage
Fig.3 Peak Forward Current vs.
Duty
Ratio
Fig.4 Forward Current vs.
Forward
V
oltage
Peak forward current I
FM
(mA)
Duty ratio
100
10
10
−
2
10
−
1
1 000
Pulse width
≤
100
μ
s
T
a
=
25
˚
C
1
Forward current I
F
(mA)
Foward voltage V
F
(V)
100
10
1
3.5
3
2.5
2
1.5
1
0.5
0
25
˚
C
0
˚
C
−
25
˚
C
50
˚
C
T
a
=
75
˚
C
Collector current I
C
(mA)
Forward current I
F
(
mA
)
0
0
V
CE
=
5V
T
a
=
25
˚
C
12
8
10
6
4
2
10
20
30
40
50
Collector current I
C
(mA)
Collector-emitter V
CE
(V)
789
1
0
6
7
5
6
3
4
2
1
0
05
4
3
2
1
I
F
=
50mA
40mA
30mA
20mA
10mA
T
a
=
25
˚
C
Fig.1 Forward Current vs.
Ambient
T
emperature
Fig.2 Collector Power Dissipation vs.
Ambient
T
emperature
Forward current I
F
(mA)
Ambient temperature T
a
(
˚
C)
−
25
0
25
50
75
85
100
0
10
20
30
40
50
60
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(
˚
C)
−
25
0
25
50
75
85
100
0
20
40
60
80
100
120
75
15
6
Sheet No.: D3-A02501
F
EN
GP1S52VJ000F
Fig.7 Collector Current vs.
Ambient
T
emperature
Fig.8 Collector-emitter Saturation V
oltage
vs.
Ambient
T
emperature
Fig.9 Response Time vs. Load Resistance
Fig.10 T
est Circuit for Response Time
Fig.1
1 Frequency Response
Fig.12 Collector Dark Current vs.
Ambient
T
emperature
Collector current I
C
(mA)
Ambient temperature T
a
(
˚
C)
02
5
−
25
50
100
75
4
I
F
=
20mA
V
CE
=
5V
3
2
1
0
Response time (
μ
s)
Load resistance R
L
(k
Ω
)
10
10
1
0.1
0.1
0.01
V
CE
=
2V
I
C
=
2mA
T
a
=
25
˚
C
100
1
t
f
t
r
t
d
t
s
Collector-emitter saturation voltage V
CE (sat)
(V)
Ambient temperature T
a
(
˚
C)
I
F
=
40mA
I
C
=
0.5mA
0.25
0.2
0.15
0.1
0.05
−
25
75
100
50
25
0
0
V
oltage gain A
V
(dB)
Frequency f (
Hz
)
10
6
10
5
10
4
0
−
5
−
10
−
15
−
20
10
3
10
2
V
CE
=
2V
I
C
=
2mA
T
a
=
25
˚
C
1k
Ω
100
Ω
R
L
=
10k
Ω
5
Collector dark current I
CEO
(A)
Ambient temperature T
a
(
˚
C)
75
50
100
25
0
−
25
V
CE
=
20V
10
−
10
10
−
9
10
−
8
10
−
7
10
−
6
10%
Output
Input
90%
Input
Output
R
D
V
CC
R
L
t
d
t
r
t
s
t
f
P1-P3
P4-P6
P7-P9
P10-P12
GP1S52VJ000F
Mfr. #:
Buy GP1S52VJ000F
Manufacturer:
Sharp Microelectronics
Description:
Optical Switches, Transmissive, Phototransistor Output Photointerrupter Transmissive 3mm
Lifecycle:
New from this manufacturer.
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