GP1S52VJ000F

4
Sheet No.: D3-A02501FEN
GP1S52VJ000F
Absolute Maximum Ratings
Electro-optical Characteristics
(T
a
=
25˚C)
Parameter Symbol Rating Unit
Input
1
Forward current I
F
50 mA
1, 2
Peak forward current I
FM
1A
Reverse voltage V
R
6V
Power dissipation P 75 mW
Output
Collector-emitter voltage
V
CEO
35 V
Emitter-collector voltage
V
ECO
6V
Collector current
I
C
20 mA
1
Collector power dissipation P
C
75 mW
Operating temperature T
opr
25 to
+
85 ˚C
Storage temperature T
stg
40 to
+
100 ˚C
3
Soldering temperature T
sol
260 ˚C
1
Refer to Fig. 1, 2, 3
2 Pulse width 100
μ
s, Duty ratio
=
0.01
3 For 5s or less
(T
a
=
25˚C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input
Forward voltage V
F
I
F
=
20mA
1.25 1.4 V
Peak forward voltage V
FM
I
FM
=
0.5A 3 4 V
Reverse current I
R
V
R
=
3V
−−
10
μ
A
Output Collector dark current I
CEO
V
CE
=
20V
1 100 nA
Transfer
charac-
teristics
Collector current I
C
V
CE
=
5V, I
F
=
20mA 0.5
5mA
Collector-emitter saturation voltage V
CE(sat)
I
F
=
40mA, I
C
=
0.5mA
−−
0.4 V
Response time
Rise time t
r
V
CE
=
2V, I
C
=
2mA, R
L
=
100
Ω
315
μ
s
Fall time t
f
420
5
Sheet No.: D3-A02501FEN
GP1S52VJ000F
Fig.5 Collector Current vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
Fig.3 Peak Forward Current vs.
Duty Ratio
Fig.4 Forward Current vs.
Forward Voltage
Peak forward current I
FM
(mA)
Duty ratio
100
10
10
2
10
1
1 000
Pulse width100μs
T
a
=25˚C
1
Forward current I
F
(mA)
Foward voltage V
F
(V)
100
10
1
3.532.521.510.50
25˚C
0˚C
25˚C
50˚C
T
a
=75˚C
Collector current I
C
(mA)
Forward current I
F
(mA)
0
0
V
CE
=5V
T
a
=25˚C
12
8
10
6
4
2
10 20 30 40 50
Collector current I
C
(mA)
Collector-emitter V
CE
(V)
789106
7
5
6
3
4
2
1
0
054321
I
F
=50mA
40mA
30mA
20mA
10mA
T
a
=25˚C
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Forward current I
F
(mA)
Ambient temperature T
a
(˚C)
25 0 25 50 75 85 100
0
10
20
30
40
50
60
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(˚C)
25 0 25 50 75 85 100
0
20
40
60
80
100
120
75
15
6
Sheet No.: D3-A02501FEN
GP1S52VJ000F
Fig.7 Collector Current vs.
Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
Fig.9 Response Time vs. Load Resistance Fig.10 Test Circuit for Response Time
Fig.11 Frequency Response Fig.12 Collector Dark Current vs.
Ambient Temperature
Collector current I
C
(mA)
Ambient temperature T
a
(˚C)
02525 50 10075
4
I
F
=20mA
V
CE
=5V
3
2
1
0
Response time (μs)
Load resistance R
L
(kΩ)
10
1010.1
0.1
0.01
V
CE
= 2V
I
C
= 2mA
T
a
=25˚C
100
1
t
f
t
r
t
d
t
s
Collector-emitter saturation voltage V
CE (sat)
(V)
Ambient temperature T
a
(˚C)
I
F
=40mA
I
C
=0.5mA
0.25
0.2
0.15
0.1
0.05
25 75 10050250
0
Voltage gain A
V
(dB)
Frequency f (Hz)
10
6
10
5
10
4
0
5
10
15
20
10
3
10
2
V
CE
=2V
I
C
=2mA
T
a
=25˚C
1kΩ
100Ω
R
L
=
10kΩ
5
Collector dark current I
CEO
(A)
Ambient temperature T
a
(˚C)
7550 10025025
V
CE
=20V
10
10
10
9
10
8
10
7
10
6
10%
Output
Input
90%
Input
Output
R
D
V
CC
R
L
t
d
t
r
t
s
t
f

GP1S52VJ000F

Mfr. #:
Manufacturer:
Sharp Microelectronics
Description:
Optical Switches, Transmissive, Phototransistor Output Photointerrupter Transmissive 3mm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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