2001 Apr 17 5
NXP Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
P
=12V; T
amb
=25°C; measured in Fig.3; unless otherwise specified.
Note
1. The circuit is DC adjusted at V
P
= 6 to 18 V and AC operating at V
P
= 8.5 to 18 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT.
V
P
supply voltage − 18 V
V
PSC
AC and DC short-circuit-safe voltage − 18 V
V
rp
reverse polarity voltage − 6V
ERG
o
energy handling capability at outputs V
P
=0V − 200 mJ
I
OSM
non-repetitive peak output current − 4A
I
ORM
repetitive peak output current − 2.5 A
P
tot
total power dissipation − 5W
T
vj
virtual junction temperature − 150 °C
T
stg
storage temperature −55 +150 °C
T
amb
ambient temperature −40 +85 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
tbf −−
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
P
supply voltage note 1 6.0 12 18 V
I
q
quiescent current R
L
= ∞−40 80 mA
Operating condition
V
MODE(oper)
mode switch voltage level 8.5 − V
P
V
I
MODE(oper)
mode switch current V
MODE
=12V − 15 40 μA
V
O
DC output voltage − 5.7 − V
⎪ΔV
OO
⎪ DC output offset voltage −−150 mV
Mute condition
V
MODE(mute)
mode switch voltage level 3.3 − 6.4 V
V
O
DC output voltage − 5.7 − V
⎪ΔV
OO
⎪ DC output offset voltage −−150 mV
Standby condition
V
MODE(stb)
mode switch voltage level 0 − 2V
I
stb
standby current − 0.1 100 μA
