Electrical specifications L9857
4/11 Doc ID 12896 Rev 3
2 Electrical specifications
2.1 Thermal data
2.2 Absolute maximum ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device
may occur. All voltage parameters are absolute voltages referenced to GND, all currents are
defined positive into any lead. This is a stress only rating and operation of the device at
these or any conditions exceeding those indicated in the operational sections of this
specifications is not implied.
Table 3. Thermal data
Symbol Parameter Value Unit
R
th(j-amb)
Thermal resistance junction-to-ambient Max. 150 °C/W
Table 4. Absolute maximum ratings
Parameter Value
Units
Symbol Definition Min. Max.
V
BS
High side floating supply voltage -0.3 20 V
V
B
High side driver output stage voltage -0.3 300 V
V
S
High side floating supply offset voltage V
B
– 20 300 V
VH
O
Output voltage gate connection V
S
- 0.3 V
B
+ 0.3 V
V
CC
Supply voltage -0.3 20 V
V
IN
Input voltage -0.3 V
CC
+ 0.3 V
I
IN
Input injection current. Full function, no
latch-up; (guaranteed by design). Test at
10 V and 17 V on eng. samples.
-+1mA
V
RES
Reset input voltage -0.3 V
CC
+ 0.3 V
V
esd
Electrostatic discharge voltage (human
body model)
2k - V
V
CDM
Charge device model CDM, EOS/ESD ass.
std 5.3. number of discharges per pin: 6
500 - V
dV/dt Allowable offset voltage slew rate -50 50 V/nsec
T
j
Junction temperature -55 150
°C
T
stg
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) 3
times Bosch soldering profil acc. to Bosch
soldering conditions, gen. spec.
- 300
L9857 Electrical specifications
Doc ID 12896 Rev 3 5/11
2.3 Recommended operating conditions
For proper operations the device should be used within the recommended conditions.
2.4 Electrical characteristics
Unless otherwise specified, V
CC
= 15 V, V
BS
= 15 V, V
S
= 0 V, IN = 0 V, R ES = 5 V,
load R = 50 :, C = 2.5 nF. Unless otherwise noted, these specifications apply for an
operating junction temperature range of -40 °C dT
j
d125 °C
Table 5. Recommended operating conditions
Parameter Value
Units
Symbol Definition Min. Max.
V
B
High side driver output stage voltage -5 V
transient 0.1μs
VS+10
(1)
1. Reset-Logic functional for V
B
-V
S
=2V, independent from VCC-level
VS+18 V
V
S
High side floating supply offset voltage
- 20 V transient 0.1μs
-5 300 V
V
HO
Output voltage gate connection V
S
V
B
V
V
CC
Supply voltage 10 18 V
V
IN
Input voltage 0 V
CC
V
V
RES
Reset input voltage 0 V
CC
V
F
S
Switching frequency - 200 kHz
T
amb
Ambient temperature -40 125 °C
Table 6. Electrical characteristics
Symbol Parameter Test condition Min. Typ. Max. Unit
V
CC
supply
V
CCUV
V
CC
supply undervoltage
V
CC
rising from 0 V
V
CC
dropping from 10 V
7.2 - 9.6 V
V
CCUVHYS
V
CC
supply undervoltage lockout
hysteresis
-0.020.20.4V
td
UVCC
Undervoltage lockout response
time
V
CC
steps either from 10 V
to 6 V or from 6 V to 10 V
0.5 - 20 Ps
I
QCC
V
CC
supply current - - - 400 PA
V
BS
supply
V
BSUV
V
BS
supply undervoltage
V
BS
rising from 0 V
V
BS
dropping from 10 V
7.2 - 9.6 V
td
UVBS
Undervoltage lockout response
time
V
BS
steps either from 10 V
to 6 V or from 6 V to 10 V
0.5 - 20 Ps
Electrical specifications L9857
6/11 Doc ID 12896 Rev 3
V
BSUVHYS
V
BS
supply undervoltage lockout
hysteresis
-0.020.20.4V
I
QBS1
V
BS
supply current
static mode, V
BS
= 10 V,
IN = 0 V or 5 V
--100PA
I
QBS2
static mode, V
BS
= 18 V,
IN = 0 V or V
CC
--200PA
'V
BS
V
BS
drop due to output turn-on
V
BS
= 17 V, C
BS
= 1 PF,
td
IG-IN
= 3
P
s, t
TEST
= 100
P
s
--210mV
Gate driver characteristics
I
PKSo1
Peak output source current
V
BS
= 10 V , T
j
= 25 °C
PW d 10 μs
120 250 -
mA
I
PKSo2
V
BS
= 10 V
PW d 10 μs
70 150 -
I
PKSo3
V
BS
= 17 V, T
j
= 25 °C
PW d 10 μs
250 500 -
I
PKSo4
V
BS
= 17 V,
PW d 10 μs
150 300 -
I
HOH,off
HOH off-state leakage current Guaranteed by design - - 1 PA
t
r1
Output rise time
V
BS
= 10 V, T
j
= 25°C - 0.2 0.4
Ps
t
r2
V
BS
= 10 V - 0.3 0.5
t
r3
V
BS
= 17 V, T
j
= 25 °C - 0.1 0.2
t
r4
V
BS
= 17 V - 0.15 0.3
I
PKSi1
Peak output sink current
IN = V
CC
, T
j
= 25 °C
V
BS
= 10 V, PW 10 μs
120 250 -
mA
I
PKSi2
IN = V
CC
,
V
BS
= 10V , PW 10 μs
70 150 -
I
PKSi3
IN = V
CC
, T
j
= 25 °C
V
BS
= 17 V, PW 10 μs
250 500 -
I
PKSi4
IN = V
CC
,
V
BS
= 17 V, PW 10 μs
150 300 -
t
f1
Output fall time
V
BS
= 10 V, T
j
= 25 °C - 0.2 0.4
Ps
t
f2
V
BS
= 10 V - 0.3 0.5
t
f3
V
BS
= 17 V, T
j
= 25 °C - 0.1 0.2
t
f4
V
BS
= 17 V - 0.15 0.3
t
plh
Input-to-output turn-on propogation
delay (50 % input level to 10 %
output level)
--0.10.3Ps
Table 6. Electrical characteristics (continued)
Symbol Parameter Test condition Min. Typ. Max. Unit

L9857-TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers High Voltage High-Side Driver
Lifecycle:
New from this manufacturer.
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