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NTMFS4846NT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 6
1 Publication Order Number:
NTMFS4846N/D
NTMFS4846N
Power MOSFET
30 V, 100 A, Single N−Channel, SO−8FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Thermally Enhanced SO8 Package
• These are Pb−Free Devices
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
20.3
A
T
A
= 85°C 14.6
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.25 W
Continuous Drain
Current R
q
JA
v
10 sec
T
A
= 25°C
I
D
32.8
A
T
A
= 85°C 23.7
Power Dissipation
R
q
JA,
t v 10 sec
T
A
= 25°C P
D
5.90 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
12.7
A
T
A
= 85°C 9.2
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.89 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
100
A
T
C
= 85°C 72
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
55.5 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
200 A
Current limited by package T
A
= 25°C I
Dmaxpkg
100 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
55 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 37 A
pk
, L = 0.3 mH, R
G
= 25 W)
EAS 205 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Lot Traceability
4846N
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
3.4 mW @ 10 V
100 A
5.1 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4846NT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4846NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4846N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
2.25
°C/W
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
55.6
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
140.8
Junction−to−Ambient − t v 10 sec
R
q
JA
21.2
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
25
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25 °C 1
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.45 1.8 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.2 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A 2.5 3.4
mW
I
D
= 15 A 2.4
V
GS
= 4.5 V
I
D
= 30 A 3.8 5.1
I
D
= 15 A 3.8
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 30 A 85 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
3250
pF
Output Capacitance C
OSS
562
Reverse Transfer Capacitance C
RSS
289
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
21.8 32
nC
Threshold Gate Charge Q
G(TH)
3.2
Gate−to−Source Charge Q
GS
8.1
Gate−to−Drain Charge Q
GD
7.4
Total Gate Charge Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
53
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0 W
18.9
ns
Rise Time t
r
34
Turn−Off Delay Time t
d(OFF)
24.6
Fall Time t
f
9.4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4846N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
10.7
ns
Rise Time t
r
18.9
Turn−Off Delay Time t
d(OFF)
34.2
Fall Time t
f
7.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.8 1.0
V
T
J
= 125°C 0.66
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
21.6
ns
Charge Time t
a
11.4
Discharge Time t
b
10.2
Reverse Recovery Charge Q
RR
8.5 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.65
nH
Drain Inductance L
D
0.005
Gate Inductance L
G
1.84
Gate Resistance R
G
0.5 1.4 2.2
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6543210
0
20
40
60
80
160
180
200
6543210
0
20
40
60
80
120
140
160
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
100
120
140
T
J
= 25°C
V
GS
= 4.2 V
10 V
5.0 V
4.5 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
100
V
DS
≥ 10 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
P1-P3P4-P6

NTMFS4846NT3G

Mfr. #:
Buy NTMFS4846NT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 12.7A SO-8FL
Lifecycle:
New from this manufacturer.
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