NTMFS4846NT3G

NTMFS4846N
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4
TYPICAL CHARACTERISTICS
Figure 3. OnResistance vs. GatetoSource
Voltage
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
V
GS
, GATETOSOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
109875432
0.002
0.003
0.004
0.005
0.006
0.008
0.009
0.010
5550453025201510
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAINTOSOURCE VOLTAGE (V)
12510075502502550
0.50
0.75
1.00
1.25
1.50
1.75
181412108642
100
1000
10,000
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
2520151050
0
1000
1500
2000
2500
3000
3500
4000
45353025201050
0
2
4
5
9
10
11
12
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
611
0.007
ID = 30 A
T
J
= 25°C
35 40 60
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 11.5 V
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
150
ID = 30 A
V
GS
= 10 V
16 20
T
J
= 150°C
V
GS
= 0 V
T
J
= 125°C
500
T
J
= 25°C
C
oss
C
iss
C
rss
15 40 50
8
7
6
3
1
20
18
V
DS
, DRAINTOSOURCE VOLTAGE (V)
16
14
12
10
8
6
4
2
0
ID = 30 A
T
J
= 25°C
QT
V
DS
V
GS
Q
gd
Q
gs
NTMFS4846N
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5
TYPICAL CHARACTERISTICS
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
4
6
12
24
28
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAINTOSOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE(°C)
1001010.1
0.1
1
10
100
1000
75 1501251005025
0
20
40
60
120
160
180
220
Figure 13. g
FS
vs. Drain Current Figure 14. I
d
vs. Pulse Width
DRAIN CURRENT (A)
PULSE WIDTH (ms)
907060504020100
0
10
20
30
110
120
130
140
10,00010001001010.1
1
10
1000
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAINTO
SOURCE AVALANCHE ENERGY (mJ)
g
FS
(S)
I
d
(A)
V
DS
= 15 V
ID = 15 A
V
GS
= 11.5 V
t
f
t
r
t
d(off)
t
d(on)
8
10
14
16
18
20
26
30
22
V
GS
= 0 V
T
J
= 25°C
10 ms
100 ms
1 ms
10 ms
dc
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
80
100
140
200
ID = 37 A
30 80 100
40
50
70
80
90
100
60
125°C
100°C
25°C
V
DS
= 1.5 V
100
NTMFS4846N
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6
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO8FL)
CASE 488AA
ISSUE H
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
M 3.00 3.40
q 0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15 BSC
D1 4.70 4.90
D2 3.80 4.00
E 6.15 BSC
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.61
K 1.20 1.35
L 0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 c
L
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
0.20
M
PIN 5
(EXPOSED PAD)
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTMFS4846NT3G

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MOSFET N-CH 30V 12.7A SO-8FL
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