July 2015
DocID027971 Rev 1
1/19
This is information on a product in full production.
www.st.com
STH290N4F6-2AG,
STH290N4F6-6AG
Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6
Power MOSFETs in H²PAK-2 and PAK-6
packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max.
I
D
P
TOT
STH290N4F6-2AG
40 V 1.7 mΩ 180 A 300 W
STH290N4F6-6AG
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all
packages.
Table 1: Device summary
Order code Marking Package Packing
STH290N4F6-2AG
290N4F6
H²PAK-2
Tape and Reel
STH290N4F6-6AG H²PAK-6
Contents
STH290N4F6-2AG, STH290N4F6-6AG
DocID027971 Rev 1
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 H²PAK-2 package information ......................................................... 10
4.2 H²PAK-6 package information ......................................................... 13
4.3 H²PAK packing information ............................................................. 16
5 Revision history ............................................................................ 18
STH290N4F6-2AG, STH290N4F6-6AG
Electrical ratings
DocID027971 Rev 1
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 40 V
V
GS
Gate-source voltage ±20 V
I
D
(1)
Drain current (continuous) at T
case
= 25 °C 180
A
Drain current (continuous) at T
case
= 100 °C 180
I
DM
(2)
Drain current (pulsed) 720 A
P
TOT
Total dissipation at T
case
= 25 °C 300 W
T
stg
Storage temperature
-55 to 175 °C
T
j
Operating junction temperature
Notes:
(1)
Limited by package, current allowed by silicon is 295 A.
(2)
Pulse width is limited by safe operating area.
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case
0.5
°C/W
R
thj-pcb
(1)
Thermal resistance junction-pcb 35
Notes:
(1)
When mounted on a 1-inc FR-4, 2 Oz copper board.

STH290N4F6-2AG

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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