Electrical characteristics
STH290N4F6-2AG, STH290N4F6-6AG
2 Electrical characteristics
(T
${casePCB}
= 25 °C unless otherwise specified)
Table 4: Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 250 µA 40
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0 V, V
DS
= 40 V
1
µA
V
GS
= 0 V, V
DS
= 40 V,
T
case
= 125 °C
100
I
GSS
Gate-body leakage current V
DS
= 0 V, V
GS
= ±20 V
±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2
4 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 45 A
1.3 1.7 mΩ
Table 5: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
- 7380 -
pF
C
oss
Output capacitance - 1080 -
C
rss
Reverse transfer
capacitance
- 590 -
Q
g
Total gate charge
V
DD
= 20 V, I
D
= 180 A,
V
GS
= 10 V (see Figure 14:
"Gate charge test circuit")
- 115 -
nC
Q
gs
Gate-source charge - 33 -
Q
gd
Gate-drain charge - 32 -
Table 6: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 20 V, I
D
= 90 A
R
G
= 4.7 Ω, V
GS
= 10 V (see
Figure 13: "Switching times
test circuit for resistive load"
and Figure 18: "Switching time
waveform")
- 20 -
ns
t
r
Rise time - 116 -
t
d(off)
Turn-off delay time - 105 -
t
f
Fall time - 48 -
