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2EDN7524GXTMA1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Pin description and connection diagrams L6743, L6743Q
4/17
2 Pin description and connection diagrams
Figure 3. Pin connection (top view)
2.1 Pin description
1
2
3
4
LGATE
GND
PHASE
UGATE
VCC
EN
PWM
BOOT
5
6
7
8
L6743
1
2
3
4
GND
GND
PHASE
UGATE
VCC
EN
PWM
BOOT
7
8
9
10
L6743Q
56
LGATE
VCC
Table 2. Pin description
Pin n
Name Function
DFN10 SO-8
11BOOT
High-side driver supply.
This pin supplies the high-side floating driver. Connect through a R
BOOT
- C
BOOT
capacitor to the PHASE pin.
Internally connected to the cathode of the integrated bootstrap diode. See
Section 5.3 for guidance in designing the capacitor value.
22PWM
Control input for the driver, 5 V compatible.
This pin controls the state of the driver and which external MOSFET have to be
turned-ON according to EN status. If left floating and in conjunction with EN
asserted, it causes the driver to enter the high-impedance (HiZ) state which causes
all MOSFETs to be OFF. See Section 5.1 for details about HiZ.
33 EN
Enable input for the driver. Internally pulled low by 15 kΩ.
Pull high to enable the driver according to the PWM status. If pulled low will cause
the drive to enter HiZ state with all MOSFET OFF regardless of the PWM status.
See Section 5.1 for details about HiZ.
4, 5 4 VCC
Device and LS driver power supply. Connect to any voltage between 5 V and 12 V.
Bypass with low-ESR MLCC capacitor to GND.
65LGATE
Low-side driver output.
Connect directly to the low-side MOSFET gate. A small series resistor can be useful
to reduce dissipated power especially in high frequency applications.
7, 8 6 GND
All internal references, logic and drivers are referenced to this pin. Connect to the
PCB ground plane.
9 7 PHASE
High-side driver return path. Connect to the high-side MOSFET source.
This pin is also monitored for the adaptive dead-time management and Pre-OV
Protection.
10 8 UGATE
High-side driver output.
Connect to high-side MOSFET gate.
PA D - T H . PA D
Thermal pad connects the Silicon substrate and makes good thermal contact with
the PCB. Connect to the PGND plane. (DFN10 only)
L6743, L6743Q Thermal data
5/17
3 Thermal data
Table 3. Thermal data
4 Electrical specifications
4.1 Absolute maximum ratings
Table 4. Absolute maximum ratings
Symbol Parameter
Value
Unit
SO8 DFN10
R
thJA
Thermal resistance junction to ambient
(Device soldered on 2s2p, 67 mm x 69 mm board)
85 45 °C/W
R
thJC
Thermal resistance junction to case - 5 °C/W
T
MAX
Maximum junction temperature 150 °C
T
STG
Storage temperature range 0 to 150 °C
T
J
Junction temperature range 0 to 125 °C
P
TOT
Maximum power dissipation at 25°C
(Device soldered on 2s2p PC board)
1.15 2.25 W
Symbol Parameter Value Unit
V
CC,
V
PVCC
to GND -0.3 to 15 V
V
BOOT
, V
UGATE
to GND
to PHASE
41
15
V
V
PHASE
to GND -8 to 26 V
V
LGATE
to GND -0.3 to VCC + 0.3 V
V
PWM,
V
EN
to GND -0.3 to 7 V
V
CC,
V
PVCC
to GND -0.3 to 15 V
Electrical specifications L6743, L6743Q
6/17
4.2 Electrical characteristics
Table 5. Electrical characteristics
(V
CC
= 12 V±15 %, T
J
= 0 °C to 70 °C unless otherwise specified).
Symbol Parameter Test conditions Min. Typ. Max. Unit
Supply current and power-ON
I
CC
VCC supply current
UGATE and LGATE = OPEN
BOOT = 12 V
5mA
I
BOOT
BOOT supply current
UGATE = OPEN;
PHASE to GND; BOOT = 12 V
2mA
UVLO
VCC
VCC turn-ON VCC rising 4.1 V
VCC turn-OFF VCC falling 3.5 V
PWM and EN input
PWM
Input high - V
PWM_IH
PWM rising 2 V
Input low - V
PWM_IL
PWM falling 0.8 V
t
HiZ
HiZ hold-off time 150 ns
EN
Input high - V
EN_IH
EN rising 2 V
Input low - V
EN_IH
EN falling 0.8 V
Input resistance to GND 15 kΩ
Gate drivers
R
HIHS
HS source resistance BOOT - PHASE = 12 V; 100 mA 2.3 2.8 Ω
I
UGATE
HS source current
(1)
1. Parameter(s) guaranteed by designed, not fully tested in production
BOOT - PHASE = 12 V;
C
UGATE
to PHASE = 3.3 nF
2A
R
LOHS
HS sink resistance BOOT - PHASE = 12 V; 100 mA 2 2.5 Ω
R
HILS
LS source resistance 100 mA 1.3 1.8 Ω
I
LGATE
LS source current
(1)
C
LGATE
to GND = 5.6 nF 3 A
R
LOLS
LS sink resistance 100 mA 1 1.5 Ω
Protections
V
PRE_OV
Pre-OV threshold PHASE rising 1.8 V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

2EDN7524GXTMA1

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Manufacturer:
Infineon Technologies
Description:
Gate Drivers
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