SIA914ADJ-T1-GE3 Datasheet SIA914ADJ-T1-GE3 | P1-P3

SiA914ADJ

www.vishay.com

Vishay Siliconix

S13-1270-Rev. A, 27-May-13

1

Document Number: 62872

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual N-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Power MOSFET

• Thermally Enhanced PowerPAK

®



SC-70 Package

- Small Footprint Area

- Low On-Resistance

• 100 % R

g

Tested

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Portable Devices such as Smart Phones, Tablet PCs and

Mobile Computing

- Load Switch

- DC/DC Converter

- Power Management

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 110 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() Max. I

D

(A)

a

Q

g

(Typ.)

20

0.043 at V

GS

= 4.5 V 4.5

3.5 nC

0.045 at V

GS

= 3.7 V 4.5

0.050 at V

GS

= 2.5 V 4.5

0.063 at V

GS

= 1.8 V 4.5

S

1

D

1

G

2

S

2

G

1

D

2

1

6

5

4

2

3

2.05 mm

PowerPAK SC-70-6 Dual

D

1

D

2

Ordering Information: SiA914ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

X X X

C J X

Lot Traceability

and Date code

Part # code

N-Channel MOSFET

G

1

D

1

S

1

N-Channel MOSFET

G

2

D

2

S

2

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

20

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

4.5

a

A

T

C

= 70 °C 4.5

a

T

A

= 25 °C 4.5

a, b, c

T

A

= 70 °C 4.3

b, c

Pulsed Drain Current (t = 100 μs) I

DM

30

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

4.5

a

T

A

= 25 °C 1.6

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

7.8

W

T

C

= 70 °C 5

T

A

= 25 °C 1.9

b, c

T

A

= 70 °C 1.2

b, c

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  5 s R

thJA

52 65

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

12.5 16

SiA914ADJ

www.vishay.com

Vishay Siliconix

S13-1270-Rev. A, 27-May-13

2

Document Number: 62872

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 20 V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= 250 μA

18

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

- 2.5

Gate-Source Threshold Voltage V

GS(th

) V

DS

= V

GS

, I

D

= 250 μA 0.4 0.9 V

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 8 V ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 20 V, V

GS

= 0 V 1

μA

V

DS

= 20 V, V

GS

= 0 V, T

J

= 55 °C 10

On-State Drain Current

a

I

D(on)

V

DS

 5 V, V

GS

= 4.5 V 10 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 3.7 A 0.035 0.043



V

GS

= 3.7 V, I

D

= 3 A 0.036 0.045

V

GS

= 2.5 V, I

D

= 3 A 0.040 0.050

V

GS

= 1.8 V, I

D

= 1 A 0.047 0.063

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 3.7 A 18 S

Dynamic

b

Input Capacitance C

iss

V

DS

= 10 V, V

GS

= 0 V, f = 1 MHz

470

pFOutput Capacitance C

oss

75

Reverse Transfer Capacitance C

rss

26

Total Gate Charge Q

g

V

DS

= 10 V, V

GS

= 8 V, I

D

= 6 A 8.2 12.5

nC

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 6 A

4.6 7

Gate-Source Charge Q

gs

0.65

Gate-Drain Charge Q

gd

0.6

Gate Resistance R

g

f = 1 MHz 0.6 3 6 

Turn-On Delay Time t

d(on)

V

DD

= 10 V, R

L

= 2.1 

I

D

 4.8 A, V

GEN

= 4.5 V, R

g

= 1 

715

ns

Rise Time t

r

20 40

Turn-Off DelayTime t

d(off)

25 50

Fall Time t

f

510

Turn-On Delay Time t

d(on)

V

DD

= 10 V, R

L

= 2.1 

I

D

 4.8 A, V

GEN

= 8 V, R

g

= 1 

510

Rise Time t

r

510

Turn-Off DelayTime t

d(off)

20 40

Fall Time t

f

510

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

C

= 25 °C 4.5

A

Pulse Diode Forward Current (t = 100 μs) I

SM

30

Body Diode Voltage V

SD

I

S

= 4.8 A, V

GS

= 0 V 0.85 1.2 V

Body Diode Reverse Recovery Time t

rr

I

F

= 4.8 A, dI/dt = 100 A/μs, T

J

= 25 °C

9.5 20 ns

Body Diode Reverse Recovery Charge Q

rr

310 nC

Reverse Recovery Fall Time t

a

5

ns

Reverse Recovery Rise Time t

b

4.5

SiA914ADJ

www.vishay.com

Vishay Siliconix

S13-1270-Rev. A, 27-May-13

3

Document Number: 62872

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Capacitance

Gate Charge

On-Resistance vs. Junction Temperature

0

5

10

15

20

25

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 1.5 V

V

GS

= 2 V

V

GS

= 2.5 V

V

GS

= 5 V thru 3 V

V

GS

= 1 V

0

2

4

6

8

10

0.0 0.4 0.8 1.2 1.6 2.0

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25

°

C

T

C

= 125

°

C

T

C

= - 55

°

C

0.0200

0.0300

0.0400

0.0500

0.0600

0.0700

0.0800

0 5 10 15 20 25 30

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 1.8 V

V

GS

= 3.7 V

V

GS

= 2.5 V

V

GS

= 4.5 V

0

100

200

300

400

500

600

0 4 8 12 16 20

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0

2

4

6

8

0.0 1.5 3.0 4.5 6.0 7.5 9.0

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

DS

= 16 V

V

DS

= 5 V

V

DS

= 10 V

I

D

= 6 A

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

- On-Resistance

(Normalized)

T

J

- Junction Temperature (°C)

V

GS

= 1.8 V

I

D

= 3.7 A

V

GS

= 4.5 V, 3.7 V, 2.5 V

SIA914ADJ-T1-GE3

SIA914ADJ-T1-GE3

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