SIA914ADJ-T1-GE3 Datasheet SIA914ADJ-T1-GE3 | P4-P6

SiA914ADJ

www.vishay.com

Vishay Siliconix

S13-1270-Rev. A, 27-May-13

4

Document Number: 62872

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power (Junction-to-Ambient)

Safe Operating Area, Junction-to-Ambient

0.1

1

10

100

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

I

S

- Source Current (A)

V

SD

- Source-to-Drain Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

0.000

0.020

0.040

0.060

0.080

0.100

0 1 2 3 4 5

R

DS(on)

- On-Resistance (Ω)

V

GS

- Gate-to-Source Voltage (V)

T

J

= 125

°

C

T

J

= 25

°

C

I

D

= 3.7 A

0.30

0.40

0.50

0.60

0.70

0.80

0.90

- 50 - 25 0 25 50 75 100 125 150

V

GS(th)

(V)

T

J

- Temperature (°C)

I

D

= 250 μA

1000

100

1

0.001 0.01 0.1 10

Power (W)

Pulse (s)

20

10

5

15

0

0.01

0.1

1

10

100

0.1 1 10 100

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

* V

GS

> minimum V

GS

at which R

DS(on)

is specied

10 s

100 μs

100 ms

Limited by R

DS

(

on

)

*

1 ms

T

A

= 25 °C

BVDSS Limited

10 ms

1 s

DC

SiA914ADJ

www.vishay.com

Vishay Siliconix

S13-1270-Rev. A, 27-May-13

5

Document Number: 62872

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Current Derating* Power Derating



* The power dissipation P

D

is based on T

J(max.)

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit.

0

2

4

6

8

10

12

0 25 50 75 100 125 150

I

D

- Drain Current (A)

T

C

- Case Temperature (°C)

Package Limited

0

2

4

6

8

25 50 75 100 125 150

T

C

- Case Temperature (°C)

Pow

er Dissipation (W)

SiA914ADJ

www.vishay.com

Vishay Siliconix

S13-1270-Rev. A, 27-May-13

6

Document Number: 62872

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Case



Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?62872

.

1

0.1

0.01

Normalized E

f

ective T ransient

Thermal Impedance

10

-3

10

-2

0001 01 110

-1

10

-4

100

Square Wave Pulse Duration (s)

Single Pulse

0.02

0.05

0.1

0.2

Duty Cycle = 0.5

1. Duty Cycle, D =

2. Per Unit Base = R

th JA

= 110 °C/W

3. T

JM

- T

A

= P

DM

Z

th JA

(t)

t

1

t

2

t

1

t

2

Notes:

4. Surface Mounted

P

DM

10

-3

10

-2

10

-1

10

-4

1

0.01

Square Wave Pulse Duration (s)

Normalized Ef fective T ransient

Thermal Impedance

Duty Cycle = 0.5

0.2

0.1

Single Pulse

0.02

0.05

SIA914ADJ-T1-GE3

SIA914ADJ-T1-GE3

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