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MJD350T4G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 12
1 Publication Order Number:
MJD340/D
MJD340(NPN),
MJD350(PNP)
High Voltage Power
Transistors
DPAK for Surface Mount Applications
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically Similar to Popular MJE340 and MJE350
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage V
CEO
300 Vdc
Collector−Base Voltage V
CB
300 Vdc
Emitter−Base Voltage V
EB
3 Vdc
Collector Current − Continuous I
C
0.5 Adc
Collector Current − Peak I
CM
0.75 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
15
0.12
W
W/°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.56
0.012
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
ESD − Human Body Model
MJD340 (NPN)
MJD350 (PNP)
HBM
3B
2
V
ESD − Machine Model
MJD340 (NPN)
MJD350 (PNP)
MM
M4
M4
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS, 15 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
J3x0 = Device Code
x= 4 or 5
G = Pb−Free Package
AYWW
J3x0G
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
www.
onsemi.com
1
2
3
4
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
MJD340 (NPN), MJD350 (PNP)
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
8.33 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
80 °C/W
Leading Temperature for Soldering Purpose T
L
260 °C
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 1 mA, I
B
= 0)
V
CEO(sus)
300 −
V
Collector Cutoff Current
(V
CB
= 300 V, I
E
= 0)
I
CEO
− 0.1
mA
Emitter Cutoff Current
(V
BE
= 3 V, I
C
= 0)
I
EBO
− 0.1
mA
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 50 mA, V
CE
= 10 V)
h
FE
30 240
−
Collector−Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 10 mA)
V
CE(sat)
− 1
V
Base−Emitter On Voltage
(I
C
= 1 A, V
CE
= 10 V)
V
BE(on)
− 1.5
V
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= 50 mA, V
CE
= 10 V, f = 10 MHz)
f
T
10 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
MJD340 (NPN), MJD350 (PNP)
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
300
10
1
100
50
3 20 30 50 70 100 200 300 500
200
70
30
20
25107
h
FE
, DC CURRENT GAIN
T
J
= 150°C
+25°C
V
CE
= 2 V
V
CE
= 10 V
-55°C
+100°C
MJD340
V, VOLTAGE (VOLTS)
1
10
Figure 2. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
0
20 30 50 100 200 500
0.4
0.8
0.6
0.2
300
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 10 V
I
C
/I
B
= 5
MJD340
1
5
0
7 10 20 30 100 200
0.8
0.6
50 70 300 500
0.4
0.2
1
200
5
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
10
7 10 20 30 100 200
Figure 4. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
100
70
V, VOLTAGE (VOLTS)
20
50 70
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 10 V
T
J
= 150°C
25°C
V
CE
= 2 V
V
CC
= 10 V
-55°C
300 500
h
FE
, DC CURRENT GAIN
50
30
I
C
/I
B
= 10
I
C
/I
B
= 5
V
CE(sat)
MJD350 MJD350
P1-P3P4-P6

MJD350T4G

Mfr. #:
Buy MJD350T4G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 0.5A 300V 15W PNP
Lifecycle:
New from this manufacturer.
Delivery:
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