MJD350T4G

MJD340 (NPN), MJD350 (PNP)
www.onsemi.com
4
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL
0.05 1 2 5 10 20 50 100 200 1 k500
R
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.1 0.50.2
Figure 5. Thermal Response
RESISTANCE (NORMALIZED)
0.03 0.3 3 30 300
0.01
I
C
, COLLECTOR CURRENT (mA)
1000
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1
20 30 50 70 100
200
500
300
500 ms
Figure 6. Active Region Safe Operating Area
200 300 500 700 100
0
100
20
50
30
10
2
5
3
1 ms
dc
100 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150_C. T
J(pk)
may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 7. Power Derating
25
25
T, TEMPERATURE (°C)
0
50 75 100 125 150
20
15
10
5
P
D
, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
T
A
T
C
T
C
T
A
MJD340 (NPN), MJD350 (PNP)
www.onsemi.com
5
ORDERING INFORMATION
Device Package Shipping
MJD340G DPAK
(Pb−Free)
75 Units / Rail
MJD340RLG DPAK
(Pb−Free)
1,800 / Tape & Reel
MJD340T4G DPAK
(Pb−Free)
2,500 / Tape & Reel
NJVMJD340T4G DPAK
(Pb−Free)
2,500 / Tape & Reel
MJD350G DPAK
(Pb−Free)
75 Units / Rail
MJD350T4G DPAK
(Pb−Free)
2,500 / Tape & Reel
NJVMJD350T4G DPAK
(Pb−Free)
2,500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MJD340 (NPN), MJD350 (PNP)
www.onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −− 0.040 −− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
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P
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
MJD340/D
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MJD350T4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 0.5A 300V 15W PNP
Lifecycle:
New from this manufacturer.
Delivery:
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