Vishay Siliconix
DG221B
Document Number: 71616
S-80263-Rev. B, 11-Feb-08
www.vishay.com
1
Quad SPST CMOS Analog Switch with Latches
FEATURES
Accepts 150 ns write pulse width
5 V on-chip regulator
Latches are transparent with WR low
Low on-resistance: 60 W
BENEFITS
Compatible with most µP buses
Allows wide power supply tolerance without affecting TTL
compatibility
Reduced power consumption
Allows flexibility of design
APPLICATIONS
µP based systems
Automatic test equipment
Communication systems
Data acquisition systems
Medical instrumentation
Factory automation
DESCRIPTION
The DG221B is a monolithic quad single-pole, single-throw
analog switch designed for precision switching applications
in communication, instrumentation and process control
systems.
Featuring independent onboard latches and a common WR
pin, each DG221B can be memory mapped, and addressed
as a single data byte for simultaneous switching.
The DG221B combines low power and low on-resistance
(60 typical) while handling continuous currents up to 20 mA.
An epitaxial layer prevents latchup.
The device features true bidirectional performance in the on
condition.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Four latchable SPST switches per package
Logic "0" 0.8 V
Logic "1" 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply.
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
IN
1
IN
2
D
1
D
2
S
1
S
2
V- V+
GND WR
S
4
S
3
D
4
D
3
IN
4
IN
3
Dual-In-Line and SOIC
Input Latch
TRUTH TABLE
IN
X
WR Switch
0 0 ON
10 OFF
X
Control data latched-in, switches on
or off as selected by last IN
X
X 1 Maintains previous state
Available
Pb-free
RoHS*
COMPLIANT
www.vishay.com
2
Document Number: 71616
S-80263-Rev. B, 11-Feb-08
Vishay Siliconix
DG221B
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 25 °C.
d. Derate 7.7 mW/°C above 75 °C.
SCHEMATIC DIAGRAM Typical Channel
ORDERING INFORMATION
Temp. Range Package Standard Part Number Lead (Pb)-free Part Number
- 40 °C to 85 °C
16-Pin Plastic DIP DG221BDJ DG221BDJ-E3
16-Pin Narrow SOIC
DG221BDY
DG221BDY-T1
DG221BDY-E3
DG221BDY-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Voltages Referenced V+ to V- 34
V
GND 25
Digital Inputs
a
, V
S
, V
D
(V-) - 2 to (V+) + 2
or 20 mA, whichever occurs first
Continuous Current (Any Terminal)
30
mA
Continuous Current, S or D 20
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 70
Storage Temperature (DJ and DY Suffix) - 65 to 125
°C
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
470
mW
16-Pin SOIC
d
600
Figure 1.
S
D
V-
V+
Latch
5 V
Reg
V+
GND
IN
X
WR
V-
Level
Shift/
Drive
-
+
V+
-
+
V-
Document Number: 71616
S-80263-Rev. B, 11-Feb-08
www.vishay.com
3
Vishay Siliconix
DG221B
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
IN
= 2.4 V, 0.8 V
f
, WR = 0
Temp.
b
Limits
- 40 °C to 85 °C
Unit Min.
d
Typ.
c
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 15 15 V
Drain-Source
On-Resistance
r
DS(on)
I
S
= - 10 mA, V
D
= ± 10 V
Room
Full
60
90
135
Ω
Source Off Leakage Current
I
S(off)
V
S
= ± 14 V, V
D
= ± 14 V
Room
Full
- 5
- 100
± 0.01
5
100
nADrain Off Leakage Current
I
D(off)
Room
Full
- 5
- 100
± 0.02
5
100
Drain On Leakage Current
I
D(on)
V
S
= V
D
= ± 14 V
Room
Full
- 5
- 200
± 0.01
5
200
Digital Control
Input Current
I
INL
, I
INH
V
IN
= 0 V or = 2.4 V
Room
Full
- 1
- 10
- 0.0004
1
10
µA
Dynamic Characteristics
Tu r n - O n T ime
t
ON
See Figure 2
Room 550
ns
Turn-Off Time
t
OFF
Room 340
Tu r n - O n T ime W r i t e
t
ON
, WR
See Figure 3
Room 550
Turn-Off Time Write
t
OFF
, WR
Room 340
Write Pulse Width
t
W
See Figure 4
Room 150 120
Input Setup Time
t
S
Room 180 130
Input Hold Time
t
H
Room 20 18
Charge Injection Q
C
L
= 1000 pF, V
gen
= 0 V, R
gen
= 0 Ω
Room 20 pC
Source-Off Capacitance
C
S(off)
f = 1 MHz, V
S
, V
D
= 0 V
Room 8
pFDrain-Off Capacitance
C
D(off)
Room 9
Channel On Capacitance
C
D(on)
Room 29
Off-Isolation OIRR
V
S
= 1 V
p-p
, f = 100 kHz
C
L
= 15 pF, R
L
= 1 kΩ
Room 70
dB
Interchannel Crosstalk
X
TA LK
Room 90
Power Supplies
Positive Supply Current I+
All Channels On or Off
V
IN
= 0 V or 2.4 V
Full 0.8 1.5
mA
Negative Supply Current I– Room - 1 - 0.4

DG221BDY-T1

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 781-DG221BDY-T1-E3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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