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DG221BDY-T1

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 71616
S-80263-Rev. B, 11-Feb-08
Vishay Siliconix
DG221B
TEST CIRCUITS
Figure 2. Switching Time
V-
t
r
< 10 ns
t
f
< 10 ns
50 %
0 V
3 V
t
OFF
t
ON
V
O
V
S
90 %
Logic
Input
Switch
Input
Switch
Output
C
L
(includes fixture and stray capacitance)
V+
IN
R
L
R
L
+ r
DS(on)
V
O
= V
S
S D
- 15 V
V
O
GND
2 V
WR
C
L
35 pF
R
L
1 kΩ
+ 15 V
Figure 3. WR Switching Time
C
L
(includes fixture and stray capacitance)
V+
IN
R
L
R
L
+ r
DS(on)
V
O
= V
S
S D
- 15 V
V
O
GND
2 V
WR
C
L
35 pF
V-
R
L
1 kΩ
+ 15 V
0 V
t
r
< 10 ns
t
f
< 10 ns
0 V
3 V
t
OFF
, WRt
ON
, WR
V
O
V
S
90 %
50 %
0 V
3 V
WR
IN
V
OUT
Figure 4. WR Setup Conditions
t
H
= Hold Time
t
S
= Setup Time
t
W
= WR Pulse Width
t
S
t
S
t
H
t
H
t
W
3 V
3 V
VOUT
WR
IN
50 %
50 %
Document Number: 71616
S-80263-Rev. B, 11-Feb-08
www.vishay.com
5
Vishay Siliconix
DG221B
TEST CIRCUITS
Notes:
a. Application hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
Figure 5. Charge Injection
ΔV
O
= measured voltage error due to charge injection
The charge injection in coulombs is Q = C
L
x ΔV
O
C
L
1000 pF
S
V
O
D
V
g
- 15 V
IN
V+
V-
3 V
R
g
+ 15 V
WR
V
O
ΔV
O
IN
X
OFF OFFON
Figure 6. Off Isolation
S
IN
R
L
D
R
g
= 50 Ω
V
S
V
O
2.4 V
Off Isolation = 20 log
V
S
V
O
V+
- 15 V
GND V-
C
C
+ 15 V
WR
C = RF bypass
Figure 7. Channel-to-Channel Crosstalk
S
1
IN
1
0V
R
L
V
O
0V
+ 15 V
- 15 V
GND
V+
V-
NC
C
C
50 Ω
V
S
IN
2
S
2
R
g
= 50 Ω
D
1
D
2
X
TA L K
Isolation = 20 log
V
S
V
O
C = RF bypass
WR
APPLICATION HINTS
a
V+
Positive Supply
Voltage
(V)
V-
Negative Supply
Vol tage
(V)
GND
(V)
WR
(V)
V
IN
Logic Input Voltage
V
INH(min)
/V
INL(max)
(V)
V
S
or V
D
Analog Voltage
Range
(V)
15 - 15 0 2.4/0.8 2.4/0.8 - 15 to 15
10 - 10 0 2.4/0.8 2.4/0.8 - 10 to 10
10 - 5 0 2.4/0.8 2.4/0.8 - 5 to 10
www.vishay.com
6
Document Number: 71616
S-80263-Rev. B, 11-Feb-08
Vishay Siliconix
DG221B
APPLICATIONS
Notes:
a. WR may be held at "0" for temporary operation similar to DG201A/DG201B. With WR at “0” SW
1
will remain on as long as IN
1
is held at "0" V.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71616.
Figure 7. µP-Controlled Analog Signal Attenuator
+ 15 V
GND
DG221B
- 15 V
V+
S
4
D
4
S
3
D
3
S
2
D
2
S
1
D
1
IN
1
V-
D
C
Q
IN
2
D
C
Q
IN
3
D
C
Q
IN
4
D
C
Q
V
IN
900 kΩ
9 MΩ
90 kΩ
9 kΩ
1 kΩ
+
-
V
O
TL081
WR
Address
Decoder
CS
Address Bus
WR
Data Bus
The TL081 is used as an output buffer while
the voltage divider provides attenuation.
TRUTH TABLE
IN
1
IN
2
IN
3
IN
4
WR
a
ON SWITCH
0 0000 All
11110 None
01110 1
10110 2
11010 3
11100 4
OUTPUT ATTENUATION FOR FIGURE 7
WR
IN
1
IN
2
IN
3
IN
4
Gain
0 0111 0.1
01011 0.01
01101 0.001
011100.0001
P1-P3P4-P6P7-P9P10-P10

DG221BDY-T1

Mfr. #:
Buy DG221BDY-T1
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 781-DG221BDY-T1-E3
Lifecycle:
New from this manufacturer.
Delivery:
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