VS-MUR1620CTPbF, VS-MUR1620CT-N3
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Vishay Semiconductors
Revision: 11-Aug-11
1
Document Number: 94078
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Ultrafast Rectifier, 2 x 8 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION/APPLICATIONS
VS-MUR1620CTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 8 A
V
R
200 V
V
F
at I
F
0.975 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Diode variation Common cathode
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current
per leg
I
F(AV)
8.0
A
total device Rated V
R
, T
C
= 150 °C 16
Non-repetitive peak surge current per leg I
FSM
100
Peak repetitive forward current per leg I
FM
Rated V
R
, square wave, 20 kHz, T
C
= 150 °C 16
Operating junction and storage temperatures T
J
, T
Stg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 8 A - - 0.975
I
F
= 8 A, T
J
= 150 °C - - 0.895
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 150 °C, V
R
= V
R
rated - - 250
Junction capacitance C
T
V
R
= 200 V - 25 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
