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VS-MUR1620CTPBF

P1-P3P4-P6P7-P7
VS-MUR1620CTPbF, VS-MUR1620CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Aug-11
4
Document Number: 94078
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
03
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
6912
Square wave (D = 0.50)
Rated V
R
applied
0612
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
39
2
4
10
6
8
RMS limit
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
20
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
60
40
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
30
50
10
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
40
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
200
120
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
80
160
0
VS-MUR1620CTPbF, VS-MUR1620CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Aug-11
5
Document Number: 94078
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-MUR1620CTPbF, VS-MUR1620CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Aug-11
6
Document Number: 94078
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MUR1620CTPbF 50 1000 Antistatic plastic tube
VS-MUR1620CT-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information
TO-220ABPbF www.vishay.com/doc?95225
TO-220AB-N3 www.vishay.com/doc?95028
P1-P3P4-P6P7-P7

VS-MUR1620CTPBF

Mfr. #:
Buy VS-MUR1620CTPBF
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 844-MUR1620CT
Lifecycle:
New from this manufacturer.
Delivery:
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