IXTH1N300P3HV Datasheet IXTT1N300P3HV, IXTH1N300P3HV | P1-P3

DS100590A(6/14)

High Voltage

Power MOSFET

N-Channel Enhancement Mode

Features



High Blocking Voltage



High Voltage Packages

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



High Voltage Power Supplies



Capacitor Discharge Applications



Pulse Circuits



Laser and X-Ray Generation Systems

IXTT1N300P3HV

IXTH1N300P3HV

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 3000 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 3000 V

V

GSS

Continuous 20 V

V

GSM

Transient 30 V

I

D25

T

C

= 25C 1.00 A

I

D110

T

C

= 110C 0.65 A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

2.60 A

P

D

T

C

= 25C 195 W

T

J

- 55 ... +150 C

T

JM

150 C

T

stg

- 55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in

Weight TO-268HV 4.0 g

TO-247HV 6.0 g

V

DSS

= 3000V

I

D25

= 1.00A

R

DS(on)





50





Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250A 3000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250A 2.0 4.0 V

I

GSS

V

GS

= 20V, V

DS

= 0V 100 nA

I

DSS

V

DS

= 0.8 • V

DSS

,

V

GS

= 0V 25 A

T

J

= 125C 250A

R

DS(on)

V

GS

= 10V, I

D

= 0.5A, Note 1 50 

Preliminary Technical Information

G = Gate D = Drain

S = Source Tab = Drain

TO-268HV (IXTT)

G

D (Tab)

S

TO-247HV (IXTH)

D (Tab)

G

S

D

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTT1N300P3HV

IXTH1N300P3HV

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 50V, I

D

= 0.5A, Note 1 0.4 0.7 S

C

iss

895 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 48 pF

C

rss

17 pF

t

d(on)

22 ns

t

r

35 ns

t

d(off)

78 ns

t

f

60 ns

Q

g(on)

30.6 nC

Q

gs

V

GS

= 10V, V

DS

= 1kV, I

D

= 0.5 • I

D25

4.0 nC

Q

gd

15.7 nC

R

thJC

0.64 C/W

R

thCS

TO-247HV 0.21 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 1.0 A

I

SM

Repetitive, Pulse Width Limited by T

JM

4.0 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

I

F

= 1A, -di/dt = 100A/μs, V

R

= 100V 1.8 μs

Note: 1. Pulse test, t  300s, duty cycle, d  2%.

Resistive Switching Times

V

GS

= 10V, V

DS

= 500V, I

D

= 0.5 • I

D25

R

G

= 20 (External)

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

TO-268HV Outline

TO-247HV Outline

PINS:

1 - Gate 2 - Source

3, 4 - Drain

E

E1

L2

D1

D3

A1

L4

D2

C2

b

2

1

A

H

C

3

D

2 1

ee

A2

L3

L

3

E

R

A

Q

S

A3

e

D

c

b

A1

L1

D3

D1

D2

E2

E3

3X

2X

4X

3X

A2

b1

0P

E1

0P1

4

31 2

e1

L

IXTT1N300P3HV

IXTH1N300P3HV

Fig. 6. Input Admittance

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

- 40ºC

25ºC

Fig. 5. Maximum Drain Current vs.

Case Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 1. Output Characteristics @ T

J

= 25ºC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 102030405060708090100

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

4V

5V

5.5V

6V

Fig. 2. Output Characteristics @ T

J

= 125ºC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0 20406080100

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

6V

4V

5V

Fig. 3. R

DS(on)

Normalized to I

D

= 0.5A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 0.5A

I

D

= 1A

Fig. 4. R

DS(on)

Normalized to I

D

= 0.5A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

IXTH1N300P3HV

IXTH1N300P3HV

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