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IXTH1N300P3HV

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT1N300P3HV
IXTH1N300P3HV
Fig. 7. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 4 8 121620242832
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 1000V
I
D
= 0.5A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
iss
Crss
C
oss
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1N300P3(M4) 6-02-14-A
IXTT1N300P3HV
IXTH1N300P3HV
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
100ms
1ms
100µs
R
DS(on)
Limi
t
10ms
DC
Fig. 12. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100ms
1ms
100µs
R
DS(on)
Limi
t
10ms
DC
P1-P3P4-P5

IXTH1N300P3HV

Mfr. #:
Buy IXTH1N300P3HV
Manufacturer:
Littelfuse
Description:
MOSFET DISC MOSFET N-CH STD-POLAR3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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