NSBC114YDXV6T1

© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 6
1 Publication Order Number:
NSBC114EDXV6/D
NSBC114EDXV6T1,
NSBC114EDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low power surface mount applications where board space is at
a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead−Free Solder Plating
These are Pb−Free Devices
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation; T
A
= 25°C
Derate above 25°C
P
D
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
R
q
JA
350 (Note 1) °C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation; T
A
= 25°C
Derate above 25°C
P
D
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
R
q
JA
250 (Note 1) °C/W
Junction and Storage Temperature
Range
T
J
, T
stg
55 to +150 °C
1. FR−4 @ Minimum Pad
NSBC114EDXV6T1
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)(2)(3)
(4) (5) (6)
SOT−563
CASE 463A
PLASTIC
1
xx = Device Code (Refer to Page 2)
M = Date Code
G = Pb−Free Package
MARKING
DIAGRAM
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
NSBC1xxxDXV6T1 SOT−563* 4000/Tape & Ree
l
NSBC1xxxDXV6T5 SOT−563* 8000/Tape & Ree
l
xx M G
1
NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Ree
l
NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Ree
l
*This package is inherently Pb−Free.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
2
DEVICE MARKING, ORDERING, AND RESISTOR VALUES
Device Package* Marking
R1 (kW) R2 (kW)
NSBC114EDXV6T1 SOT−563 7A 10 10
NSBC124EDXV6T1 SOT−563 7B 22 22
NSBC144EDXV6T1 SOT−563 7C 47 47
NSBC114YDXV6T1 SOT−563 7D 10 47
NSBC114TDXV6T1 (Note 2) SOT−563 7E 10
NSBC143TDXV6T1 (Notes 2) SOT−563 7F 4.7
NSBC113EDXV6T1 (Note 2) SOT−563 7G 1.0 1.0
NSBC123EDXV6T1 (Notes 2) SOT−563 7H 2.2 2.2
NSBC143EDXV6T1 (Notes 2) SOT−563 7J 4.7 4.7
NSBC143ZDXV6T1 (Notes 2) SOT−563 7K 4.7 47
NSBC124XDXV6T1 (Notes 2) SOT−563 7L 22 47
NSBC123JDXV6T1 (Note 2) SOT−563 7M 2.2 47
NSBC115EDXV6T1 (Notes 2) SOT−563 7N 100 100
NSBC144WDXV6T1 (Notes 2) SOT−563 7P 47 22
The “G’’ suffix indicates Pb−Free package available.
*This package is inherently Pb−Free.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
100 nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0) I
CEO
500 nAdc
Emitter-Base Cutoff Current NSBC114EDXV6T1
(V
EB
= 6.0 V, I
C
= 0) NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 Vdc
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0) V
(BR)CEO
50 Vdc
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain NSBC114EDXV6T1
(V
CE
= 10 V, I
C
= 5.0 mA) NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) NSBC113EDXV6T1/NSBC123EDXV6T1
(I
C
= 10 mA, I
B
= 1 mA) NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1
V
CE(sat)
0.25 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW) NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW) NSBC144EDXV6T1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW) NSBC115EDXV6T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW) NSBC144WDXV6T1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kW) NSBC113EDXV6T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW) NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC143ZDXV6T1
V
OH
4.9 Vdc
Input Resistor NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k W
Resistor Ratio NSBC114EDXV6T1/NSBC124EDXV6T1/
NSBC144EDXV6T1/NSBC115EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144WDXV6T1
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

NSBC114YDXV6T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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